1. Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond
- Author
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Zhihong Feng, Jianchao Guo, Wang Yanfeng, Hong-Xing Wang, Zhou Chuangjie, Shujun Cai, Rui Zhou, Feng Qiu, Zezhao He, and Cui Yu
- Subjects
Materials science ,business.industry ,Transistor ,Microwave power ,Diamond ,engineering.material ,Condensed Matter Physics ,Polycrystalline diamond ,Electronic, Optical and Magnetic Materials ,law.invention ,symbols.namesake ,law ,Materials Chemistry ,symbols ,engineering ,Optoelectronics ,Field-effect transistor ,Radio frequency ,Electrical and Electronic Engineering ,business ,Raman spectroscopy ,Power density - Abstract
In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I–V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.
- Published
- 2020