1. Crystal Growth and Basic Transport and Magnetic Properties of MnBi2Te4.
- Author
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Rani, Poonam, Saxena, Ankush, Sultana, Rabia, Nagpal, Vipin, Islam, S. S., Patnaik, S., and Awana, V. P. S.
- Subjects
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CRYSTAL growth , *MAGNETIC properties , *MAGNETIC insulators , *TOPOLOGICAL insulators , *MAGNETIC susceptibility , *MAGNETOELASTIC effects - Abstract
We report successful growth of magnetic topological insulator (MTI) MnBi2Te4. The heating schedule basically deals with growth of the crystal from melt at 9000C and very slow cooling (10C/hr) to around 6000C with 24 hours hold time, followed by cooling to room temperature. Our detailed, PXRD Reitveld analysis showed that the resultant crystal is dominated mainly by MnBi2Te4 and minor phases of Bi2Te3 and MnTe. The transport measurements showed a step like behavior at around 150 K followed by cusp like structure in resistivity at around 25 K (TP) due reported anti-ferromagnetic ordering of Mn. Both the resistivity transitions are seen clearly in dρ/dT measurements at 150 K and 20 K, respectively. The 25 K transition of the compound is also seen in magnetic susceptibility. Low temperature (5 K) magneto-resistance (MR) in applied field of up to 6 Tesla exhibited –ve MR below 3 Tesla and + ve for higher fields. Also, seen are steps in MR below 1 Tesla. The studied MnBi2Te4 MTI crystal could be a possible candidate for quantum anomalous Hall (QAH) effect. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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