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The electronic structure and magnetic properties of SnO monolayer doped with metal atoms (Cu or Zn) are investigated using first-principles calculations. Firstly, it is easier to form the substitution doping under oxygen-rich conditions, the formation energy of Zn-dopant is lower than that of Cu-dopant. Doping Zn atom gives rise to no magnetism. However, the magnetism is caused by Cu doping with magnetic moment of 1 µB, mainly due to the hybridization of Cu-3d and O-2p orbitals from the perspective of electronic structure. Researches on magnetic coupling of Cu atoms at different distances indicate the Cu-Cu are coupled mainly antiferromagnetically while it is ferromagnetic at the distance of 7.592 Å. Moreover, the magnetic moment of the Cu-doped SnO monolayer remains 1 µB, subjected to biaxial symmetric strains. The magnetic moments are also produced by Cu and O atoms. The Zn-doped SnO monolayer is inert, and the magnetism is still absent when strain is applied. [ABSTRACT FROM AUTHOR]

Two-dimensional tin (II) monoxide (SnO) has shown great potential for future electronics, optoelectronics and thin film transistor devices. Using first-principles calculations, we investigated the structural, electronic, and magnetic properties of the Mn-doped SnO monolayer. The structural stability of the materials was examined which pointed to the feasibility of Mn substitutional doping in pure SnO monolayer. The doping-induced spin polarization revealed magnetic behavior which is due to the interaction between the dopants and the surrounding Sn and O atoms. The results show that the spin-split defect states are produced in the bandgap and a magnetic moment of 4.85 µB is observed. Along with the standard GGA approach, Hubbard U correction is also adopted to calculate the electronic and magnetic properties of the doped material, which unveiled the opening of the bandgap and an increase in the magnetic moment. The magnetic behavior of the dopant is discussed in the context of crystal field splitting in the square planner geometry of the host. The magnetic coupling between magnetic moments caused by two Mn atoms in the SnO monolayer is ferromagnetic, which is due to the p–d exchange interactions. It is found that Mn-doped monolayer SnO turns out to be a promising candidate for realizing a p-type diluted-magnetic-semiconducting metal oxide. [ABSTRACT FROM AUTHOR]

Pure and aluminium-doped tin oxide (SnO) nanoparticles have been successfully synthesized by a sol-gel method. The paper mainly reports an investigation on the effect of a non-ferromagnetic dopant (aluminium) on the magnetic properties of SnO nanoparticles. The structural and optical properties were also examined. The as-prepared nanoparticles were characterized using X-ray diffraction (XRD), thermogravimetric analysis/differential scanning calorimetry (TGA/DSC), high-resolution transmission electron microscopy (HRTEM), Fourier transform infrared spectroscopy (FTIR), UV-vis spectroscopy and magnetic characterization using a vibrating sample magnetometer (VSM). XRD data revealed the SnO phase formation for all the samples, indicating that the growth technique was efficient in diluting aluminium ions in the SnO lattice. All the samples exhibited peculiar room-temperature ferromagnetic behaviour. The origin of ferromagnetism in the samples lays around the Al-SnO interfaces and vacancy defects. [ABSTRACT FROM AUTHOR]

SrNbO (SNO)-doped YGdBaCuO (YGBCO) and pure YGBCO thin films with pure c-axis orientation were prepared by pulsed laser deposition. Compared with a pure YGBCO film, T and critical current density ( J ) (77 K, 0 T) of the SNO-doped film decreased from 91.9 to 88.7 K and from 4.2 to 2.5 MA/cm, respectively. SNO-doped YGBCO film exhibited significantly enhanced J in a magnetic field up to 9 T at 4.2 K and up to 7 T at 65 K for B//C, indicating that the SNO-doped YGBCO film possessed more effective flux pinning centers, which were stacking faults, c-axis defects, and inclined defects identified by transmission electron microscopy analysis. [ABSTRACT FROM AUTHOR]

The ab initio calculations, based on the Korringa-Kohn-Rostoker method combined with the coherent potential approximation (KKR-CPA), were used to investigate the electronic structure and magnetic properties of F-doped SnO and SnMn O systems. We discuss in particular the fluorine interstitial (F), oxygen interstitial (O), and oxygen vacancy (V) defects. Our investigation confirms the n-type conductivity for SnO F . The new finding is SnMn O F system could induce the ferromagnetic (FM) stability instead of the disordered local moment (DLM) and shows the half metallic characteristic. Since the majority-spin related to $\mathrm {e}_{\mathrm {g}}^{\mathrm {+}}$ is located around the Fermi level. For SnMn O system, the exchange splitting between $\mathrm {e}_{\mathrm {g}}^{\mathrm {+}}$ and $\mathrm {e}_{\mathrm {g}}^{\mathrm {-}}$ states is larger than the crystal field splitting between e and t states. For SnMn O F compared to SnMn O , the exchange splitting has increased and the total magnetic moment augmented due to fluorine impurity. [ABSTRACT FROM AUTHOR]

Based on first-principles spin-density functional calculations, using the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA), we investigated the half-metallic ferrimagnetic properties of SnO codoped with Mn and Co impurities (Sn(Mn, Co)O) within the self-interaction-corrected (SIC) local density approximation. Mechanism of hybridization and interaction between magnetic ions in Sn(Mn, Co)O is investigated. The band structure model has been used to explain the strong ferrimagnetic interaction observed and the mechanism that stabilizes this state is proposed. [ABSTRACT FROM AUTHOR]