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Layered oxychalcogenides have received extensive attention in the fields of magnetism, superconductivity, lithium battery, and luminescence due to their unique electronic, magnetic properties, and layered structure, among which layered oxyselenides have excellent and promising thermoelectric performance, such as BiCuSeO and Bi2LnO4Cu2Se2. Here, we successfully synthesized Sr2MO2Cu2Se2 (M = Co, Ni, Zn) and Sr2FeO3CuSe and investigated the thermoelectric properties at a wide temperature range (298–923 K). They have a relatively high Seebeck coefficient (>300 μV K−1) in medium to high temperature range and possess a low thermal conductivity. The power factor and ZT reach 65 μW m−1 K−1 and 0.07 at 923 K for intrinsic Sr2NiO2Cu2Se2, and a higher performance is expected to be achieved by strategies like carrier concentration optimization and band structure engineering. [ABSTRACT FROM AUTHOR]

GeTe is a promising candidate for the fabrication of high‐temperature segments for p‐type thermoelectric (TE) legs. The main restriction for the widespread use of this material in TE devices is high carrier concentration (up to ∼ 1021 cm−3), which causes the low Seebeck coefficient and high electronic component of thermal conductivity. In this work, the band structure diagram and phase equilibria data have been effectively used to attune the carrier concentration and to obtain the high TE performance. The Ge1−xBixTe (x = 0.04) material prepared by the Spark plasma sintering (SPS) technique demonstrates a high power factor accompanied by moderate thermal conductivity. As a result, a significantly higher dimensionless TE figure of merit ZT = 2.0 has been obtained at ∼ 800 K. Moreover, we are the first to propose that application of the developed Ge1−xBixTe (x = 0.04) material in the TE unicouple should be accompanied by SnTe and CoGe2 transition layers. Only such a unique solution for the TE unicouple makes it possible to prevent the negative effects of high contact resistance and chemical diffusion between the segments at high temperatures. [ABSTRACT FROM AUTHOR]

Gallium (Ga) doping together with low dimensionality has been a promising approach to improve thermoelectric performance of zinc oxide (ZnO) materials, due to the increase of carrier concentration and suppression of phonon transport. So far, the highest power factor of Ga‐doped ZnO (GZO) thin films has reached 280 μW m−1 K−2, which is still limited for practical applications. In this work, we have simultaneously optimized the electrical conductivity and Seebeck coefficient of GZO thin films using the combination of oxygen defects and sandwich structure (GZO‐ZnO‐GZO). Benefiting from energy filtering effect at the interface between GZO and ZnO layers and high oxygen vacancy concentration, the density of states (DOS) effective mass has been increased together with a relatively high carrier concentration. As a result, an improved power factor value of 434 μW m−1 K−2 at 623 K has been achieved, which is comparable to the best values reported for ZnO‐based films. This method of combining defect engineering and sandwich structure design shows great potential in enhancing the thermoelectric performance of ZnO‐based thin films or other oxide materials. [ABSTRACT FROM AUTHOR]

We investigate the thermoelectric properties of bulk polycrystalline samples of WSe2‐based compounds with partial substitutions in the cationic (W) and the anionic (Se) sublattices in the temperature range from 4.2 to 650 K. The substitution of W for Nb leads to a significant increase in the charge carrier concentration, however, deteriorates the charge carrier mobility. In contrast, the substitution of selenium for sulfur increases the charge carrier mobility, the thermal conductivity, and the Seebeck coefficient but conductivity changes non‐monotonical. We show that the addition of sulfur in anionic sublattice affects the grain sizes in the polycrystalline material. Using substitutions in the anionic and cationic sublattices, we find the optimal ratio of the elements for better thermoelectric efficiency. The W0.98Nb0.02Se1.7S0.3 sample showed the best value of the figure of merit ZT = 0.26 (T = 650 K). [ABSTRACT FROM AUTHOR]