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The formation mechanism of Cd–S–Se quantum dots (QDs) with a CdS/CdSe core–shell structure within a silicate glass system was investigated by monitoring the change in the first excitonic absorption peak of CdSe, CdS, and Cd–S–Se QDs as a function of the heat‐treatment (HT) duration. When a silicate glass containing QD formation components for CdSe or CdS single‐phased QDs was heat‐treated, CdSe QDs grew via Ostwald ripening, whereas CdS QDs hardly formed within the given silicate glass matrix. When the glass, including CdO, ZnSe, and ZnS, was utilized for the synthesis of Cd–S–Se QDs within the glass matrix, Cd–S–Se QDs were successfully formed and exhibited similar growth behavior to CdSe QDs during the initial stage of HT. The structural changes in the QD‐embedded glasses during HT were also monitored by Raman spectroscopy and discussed, and a possible formation mechanism of CdSe/CdS core–shell‐structured QDs within silicate glasses is suggested. [ABSTRACT FROM AUTHOR]

CsPbBr3−xIx quantum dots were precipitated in boro‐germanate glasses with various Br/I ratios by the melt‐quenching method. When the heat treatment temperature (TH) increased from 480 to 550°C, more I− entered the perovskite crystal lattice, resulting in lattice expansion, the X‐ray diffraction peaks of CsPbBr1.5I1.5 glasses shifted to small angles. The high concentration of I− entered into the perovskite crystal lattice, decreasing the bandgap. The photoluminescence (PL) peaks of CsPbBr1.5I1.5 glasses redshifted from 577 to 620 nm, the PL peaks of CsPbBrI2 glasses shifted from 614 to 636 nm, and the PL peaks of CsPbBr0.5I2.5 glasses shifted from 650 to 672 nm. As the ratio of Br/I reduced from 2.5/0.5 to 0.5/2.5, the PL lifetime of CsPbBr3−xIx glass increased from 2.08 to 74.5 ns. With the delay time from 1 to 1500 ps, the carriers gradually accumulated in the band‐edge state, and the bleaching signal intensity increased. Then more and more carriers returned to the ground state through radiative or nonradiative recombination, the bleaching signal intensity decreased. [ABSTRACT FROM AUTHOR]

Well‐defined density functional theory (DFT) calculations are performed as the first exploratory study for the atomic and electronic mechanism of defect mediated morphology and optical properties of CdnSen (n = 3, 10, 13, and 33) quantum dots (QDs) in inorganic amorphous matrix. The intrinsic defects of pristine CdSe QDs, and the interfacial defects between the QDs and surrounding amorphous matrix, were systematically studied. The calculated electronic structure suggested that the pristine CdSe QDs capped by the structural modifiers or non‐bridging oxygen in the amorphous matrix gave rise to the structure reconstruction and paired defect states at the edge of the valence and conduction bands. The orbital analysis elucidated that the redistribution of the majority of HOMO and LUMO electron density was localized over the bonds formed by capping atoms and QDs. These changes in the electronic structures were further demonstrated by CdSe QDs embedded sodium silicate glasses. It turned out that Se atoms at QDs/glass interface were much more active than those found on the surface of organically passivated CdSe QDs. The results serve as a new paradigm in materials research to explore structural origins of defect emission from QDs and a new strategy to develop glasses containing QDs with high photoluminescence quantum efficiency. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) properties of PbSe and Sr2+‐doped PbSe quantum dots (QDs) doped in silicate glasses were investigated by changing the excited laser wavelength and intensity. When BaO was replaced by SrO, the Sr2+‐doped PbSe QDs formed and showed large blue‐shifts in both absorption and PL bands compared to the PbSe QDs. It is attributed to the increasing in band gap resulted by the incorporation of Sr2+ ions into PbSe QDs. These two kinds of QDs were excited by the laser with the wavelengths of 1319 and 1532 nm. When rising the pumping intensity up to 1000 mW, the PL intensity from Sr2+‐doped PbSe QDs monotonically increased, while, the PL intensity from PbSe QDs reached maximum at pumping intensity at ~200 mW (λex = 1319 nm) and ~300 mW (λex = 1532 nm). The good resistance to photodarkening of Sr2+‐doped PbSe QDs is indicated passivation effect on the surface defects from Sr2+ ions doping. For Sr2+‐doped PbSe QDs the anti‐Stokes photoluminescence (ASPL) were observed when using both 1319 and 1532 nm excitation. The integrated intensity of the ASPL is linear with the excitation intensity, which indicates that the ASPL belongs to the phonon‐assisted one‐photon process. And the ASPL intensity as a function of excitation intensity shows a size dependence of the QDs. [ABSTRACT FROM AUTHOR]

Se2− color centers and CdSe/Cd1−xZnxSe quantum dots (QDs) were formed in silicate glasses, respectively, by carefully adjusting the content of Al2O3. The absorption coefficient and broad visible emission at 400‐700 nm of Se2− color centers increased firstly and then decreased upon increasing concentration of Al2O3 from 0 to 5 mol. %. With 2 mol. % Al2O3 adding, the band edge emission centered at 497 nm from CdSe QDs in glasses was observed after heat treatment. Raman spectra and TEM characterization confirmed the formation of CdSe/Cd1−xZnxSe QDs. The small amount addition of Al2O3 had a significant effect on the formation of Se2− color centers and precipitation of CdSe/Cd1−xZnxSe QDs in glasses due to its complicated effect on the network structure and optical basicity of the glasses. [ABSTRACT FROM AUTHOR]

Abstract: In order to alleviate the effect of the surface defects on the emission properties of quantum dots, copper ions‐doped ZnSe quantum dots (QDs) in the glasses are prepared using melt‐quenching and subsequent thermal annealing methods. For glasses without copper doping, tunable band‐edge emission from ZnSe QDs is achieved. For glasses with copper doping, efficient energy transfer from ZnSe QDs to copper ions is observed, and efficient broad band emission from copper ions is realized at the expense of the band‐edge emission of ZnSe QDs. Absorption spectra, size‐dependent broad‐band emission spectra and electron spin resonance spectra show the cupric ions are doped into the ZnSe QDs. Results reported here shows that doping of transition‐metal ions into semiconductor QDs in glasses is promising for development of high efficient luminescent glasses. [ABSTRACT FROM AUTHOR]

The influence of Nd3+ ions was investigated on the precipitation and optical properties of PbS quantum dots ( QDs) inside silicate glasses. The diameters of the PbS QDs decreased as the concentration of Nd3+ in the glass increased as evidenced by blue shifts in the absorption and photoluminescence spectra. Electron energy loss spectroscopy shows that Nd3+ ions exist preferentially inside the PbS nanocrystals rather than in the glass matrix. We postulate that Nd-O clusters are preserved during heat treatment and serve as nucleation sites for PbS crystals. No change in the local bonding scheme of the Nd3+ ions was observed following heat treatment. [ABSTRACT FROM AUTHOR]

PbS QDs of ~ 5nm diameter were precipitated in glasses containing Ag nanoparticles after 3 min of 1.5-W continuous-wave laser illumination at λ = 532 nm. Photoluminescence spectra of the PbS QDs recorded in the 1.3~1.6 μm wavelength region revealed conversion of photon energy to thermal energy by surface plasmon resonance. Laser-assisted local heating around Ag NPs can provide a new method to control the spatial distribution of QDs in glasses. [ABSTRACT FROM AUTHOR]