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Oxide‐based ceramics offer promising thermoelectric (TE) materials for recycling high‐temperature waste heat, generated extensively from industrial sources. To further improve the functional performance of TE materials, their power factor should be increased. This can be achieved by nanostructuring and texturing the oxide‐based ceramics creating multiple interphases and nanopores, which simultaneously increase the electrical conductivity and the Seebeck coefficient. The aim of this work is to achieve this goal by compacting electrospun nanofibers of calcium cobaltite Ca3Co4−xO9+δ, known to be a promising p‐type TE material with good functional properties and thermal stability up to 1200 K in air. For this purpose, polycrystalline Ca3Co4−xO9+δ nanofibers and nanoribbons were fabricated by sol–gel electrospinning and calcination at intermediate temperatures to obtain small primary particle sizes. Bulk ceramics were formed by sintering pressed compacts of calcined nanofibers during TE measurements. The bulk nanofiber sample pre‐calcined at 973 K exhibited an improved Seebeck coefficient of 176.5 S cm−1 and a power factor of 2.47 μW cm−1 K−2 similar to an electrospun nanofiber‐derived ceramic compacted by spark plasma sintering. [ABSTRACT FROM AUTHOR]

GeTe is a promising candidate for the fabrication of high‐temperature segments for p‐type thermoelectric (TE) legs. The main restriction for the widespread use of this material in TE devices is high carrier concentration (up to ∼ 1021 cm−3), which causes the low Seebeck coefficient and high electronic component of thermal conductivity. In this work, the band structure diagram and phase equilibria data have been effectively used to attune the carrier concentration and to obtain the high TE performance. The Ge1−xBixTe (x = 0.04) material prepared by the Spark plasma sintering (SPS) technique demonstrates a high power factor accompanied by moderate thermal conductivity. As a result, a significantly higher dimensionless TE figure of merit ZT = 2.0 has been obtained at ∼ 800 K. Moreover, we are the first to propose that application of the developed Ge1−xBixTe (x = 0.04) material in the TE unicouple should be accompanied by SnTe and CoGe2 transition layers. Only such a unique solution for the TE unicouple makes it possible to prevent the negative effects of high contact resistance and chemical diffusion between the segments at high temperatures. [ABSTRACT FROM AUTHOR]

Here we report the study temperature dependencies of the Seebeck coefficient, the electrical resistivity (T = 300–750 K), the total thermal conductivity (T = 300–973 K), and the thermoelectric figure of merit (T = 300–750 K) of ceramic samples of γ‐Ln0.8Yb0.2S1.5‐y (Ln = Gd, Dy) solid solutions. It was found that Yb3+ ions in γ‐Ln0.8Yb0.2S1.5‐y act as the promoters of higher crystallite nucleation rate during the formation of solid solutions. This results in the sample dispersion increase and the formation of the additional phonon scattering centers (dislocations and strain stresses along the crystallites semi‐coherent boundaries). These features of the real structure determined the low value of thermal conductivity of γ‐Ln0.8Yb0.2S1.5‐y solid solutions. The lowest electrical resistivity 20 μΩ m at 750 K and the thermal conductivity 0.58 W/m K at 973 K, the highest Seebeck coefficient 125 μV/K at 700 K and the maximum thermoelectric efficiency, ZT = 0.60 (at 770 K) were obtained for γ‐Dy0.8Yb0.2S1.5‐y. [ABSTRACT FROM AUTHOR]

The temperature dependences of the electrical conductivity σ(T), Seebeck coefficient σ(T), and heat capacity Cp(T) of polycrystalline samples of Bi2Te3, Bi2Te3+1%CuI, and Bi2Te3+1%(CuI+1/2Pb) are investigated in the temperature range below room temperature. Based on the temperature dependences of all investigated physical properties, it is discovered that phase transition occurs at 120–200 K. Investigation of single crystals shows that anomalies in the electrical resistivity (ρ(T)=1/σ(T)) occur only across the crystal growth axis (across the well‐conducting Bi–Te plane). Investigation of the low‐temperature dependence of electrical conductivity shows that all polycrystalline samples exhibit quasi‐two‐dimensional electron transport. Additionally, quasi‐two‐dimensional transport is detected in single crystals based on anisotropy analysis ρ⊥(T)/ρ‖(T):10 (where ρ‖(T) is the resistivity along the crystal growth axis, and ρ⊥(T) is resistivity across the crystal growth axis) and temperature dependence ρ(T):T2 below 50 K. The Fermi energy EF is estimated using the temperature dependence of S(T). It is discovered that an increase in EF at T > 200 K is associated with the phase transition. For single‐crystal samples, the maximum thermoelectric figure of merit ZT, as observed along the crystal growth axis, increases with doping. A maximum ZT value of ∼1.1 is observed for the Bi2Te3+1%(CuI+1/2Pb) sample at room temperature (T=300K). [ABSTRACT FROM AUTHOR]

The thermoelectric properties of a series of the polycrystalline samples of titanium dichalcogenides with partial substitution of Ti for Nb and S for Se were investigated. It was found that sintering of the samples improved the thermoelectric efficiency (ZT), and the maximum ZT was achieved at sintering temperature of 600°C. A further increase in the sintering temperature (850°C and 950°C) led to the recrystallization of the samples, as a result, the Seebeck coefficient sharply decreased and electrical conductivity dramatically increased. The temperature dependences of electrical conductivity σ(T) in the temperature range from 4.2 to 300 K and Seebeck coefficient S(T) in the temperature range from 77 to 300 K were investigated in order to determine the nature of the observed improvements in thermoelectric properties due to double substitutions and sintering. Two‐dimensionalization of electron transport properties of Ti1−xNbxS2−ySey solid solutions was found. The Fermi energy EF2D was estimated using the temperature dependences of Seebeck coefficient. The relationship between the Fermi energy EF2D and figure of merit ZT was established. The effect of sintering on parameters σ(T), S(T), charge carrier concentration (n2D), mobility (µ), and thermal conductivity (k) was found. The optimal value of Fermi energy EF2D in terms of figure of merit ZT = 0.31 at room temperature (T = 300 K) was found for Ti0.98Nb0.02S1.3Se0.7 sample sintered at 600°C. [ABSTRACT FROM AUTHOR]

We investigate the thermoelectric properties of bulk polycrystalline samples of WSe2‐based compounds with partial substitutions in the cationic (W) and the anionic (Se) sublattices in the temperature range from 4.2 to 650 K. The substitution of W for Nb leads to a significant increase in the charge carrier concentration, however, deteriorates the charge carrier mobility. In contrast, the substitution of selenium for sulfur increases the charge carrier mobility, the thermal conductivity, and the Seebeck coefficient but conductivity changes non‐monotonical. We show that the addition of sulfur in anionic sublattice affects the grain sizes in the polycrystalline material. Using substitutions in the anionic and cationic sublattices, we find the optimal ratio of the elements for better thermoelectric efficiency. The W0.98Nb0.02Se1.7S0.3 sample showed the best value of the figure of merit ZT = 0.26 (T = 650 K). [ABSTRACT FROM AUTHOR]

In this work, the thermoelectric properties of SnTe have been regulated synergistically by introduction of n-type ZnO nanoinclusions. On one hand, the excessive holes in SnTe matrix were compensated properly by n-type ZnO, and the Seebeck coefficient has been improved greatly due to the carrier energy filtering effect by a large quantity of ZnO-SnTe hetero-junction interface barriers; On the other hand, the thermal conductivity gets reduced by the enhanced phonon scattering from multiscale hierarchical architectures. Consequently, a maximum ZT of ~0.9 at 873K has been obtained in the 0.8 wt% sample, which enhances by 112% in comparison with the nanoinclusion-free sample. [ABSTRACT FROM AUTHOR]