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CsPbBr3−xIx quantum dots were precipitated in boro‐germanate glasses with various Br/I ratios by the melt‐quenching method. When the heat treatment temperature (TH) increased from 480 to 550°C, more I− entered the perovskite crystal lattice, resulting in lattice expansion, the X‐ray diffraction peaks of CsPbBr1.5I1.5 glasses shifted to small angles. The high concentration of I− entered into the perovskite crystal lattice, decreasing the bandgap. The photoluminescence (PL) peaks of CsPbBr1.5I1.5 glasses redshifted from 577 to 620 nm, the PL peaks of CsPbBrI2 glasses shifted from 614 to 636 nm, and the PL peaks of CsPbBr0.5I2.5 glasses shifted from 650 to 672 nm. As the ratio of Br/I reduced from 2.5/0.5 to 0.5/2.5, the PL lifetime of CsPbBr3−xIx glass increased from 2.08 to 74.5 ns. With the delay time from 1 to 1500 ps, the carriers gradually accumulated in the band‐edge state, and the bleaching signal intensity increased. Then more and more carriers returned to the ground state through radiative or nonradiative recombination, the bleaching signal intensity decreased. [ABSTRACT FROM AUTHOR]

Photoluminescence (PL) properties of PbSe and Sr2+‐doped PbSe quantum dots (QDs) doped in silicate glasses were investigated by changing the excited laser wavelength and intensity. When BaO was replaced by SrO, the Sr2+‐doped PbSe QDs formed and showed large blue‐shifts in both absorption and PL bands compared to the PbSe QDs. It is attributed to the increasing in band gap resulted by the incorporation of Sr2+ ions into PbSe QDs. These two kinds of QDs were excited by the laser with the wavelengths of 1319 and 1532 nm. When rising the pumping intensity up to 1000 mW, the PL intensity from Sr2+‐doped PbSe QDs monotonically increased, while, the PL intensity from PbSe QDs reached maximum at pumping intensity at ~200 mW (λex = 1319 nm) and ~300 mW (λex = 1532 nm). The good resistance to photodarkening of Sr2+‐doped PbSe QDs is indicated passivation effect on the surface defects from Sr2+ ions doping. For Sr2+‐doped PbSe QDs the anti‐Stokes photoluminescence (ASPL) were observed when using both 1319 and 1532 nm excitation. The integrated intensity of the ASPL is linear with the excitation intensity, which indicates that the ASPL belongs to the phonon‐assisted one‐photon process. And the ASPL intensity as a function of excitation intensity shows a size dependence of the QDs. [ABSTRACT FROM AUTHOR]

Abstract: In order to alleviate the effect of the surface defects on the emission properties of quantum dots, copper ions‐doped ZnSe quantum dots (QDs) in the glasses are prepared using melt‐quenching and subsequent thermal annealing methods. For glasses without copper doping, tunable band‐edge emission from ZnSe QDs is achieved. For glasses with copper doping, efficient energy transfer from ZnSe QDs to copper ions is observed, and efficient broad band emission from copper ions is realized at the expense of the band‐edge emission of ZnSe QDs. Absorption spectra, size‐dependent broad‐band emission spectra and electron spin resonance spectra show the cupric ions are doped into the ZnSe QDs. Results reported here shows that doping of transition‐metal ions into semiconductor QDs in glasses is promising for development of high efficient luminescent glasses. [ABSTRACT FROM AUTHOR]