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3. p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures.

4. Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2: CH3COOH.

5. Wet Chemical Etching of Si, Si1 − xGex, and Ge in HF : H2O2: CH3COOH