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Start Over Author "Ihun Song" Journal journal of the electrochemical society
2 results on '"Ihun Song"'

1. High Reliable and Manufacturable Gallium Indium Zinc Oxide Thin-Film Transistors Using the Double Layers as an Active Layer

Author

Ihun Song, Jae Chul Park, Sunil Kim, Chang Jung Kim, Youngsoo Park, and Jin-Seong Park

Subjects
Materials science, Renewable Energy, Sustainability and the Environment, Subthreshold conduction, business.industry, Electrical engineering, chemistry.chemical_element, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Active layer, Amorphous solid, Threshold voltage, chemistry, Thin-film transistor, Materials Chemistry, Electrochemistry, Optoelectronics, Surface layer, Gallium, business, Layer (electronics)
Abstract

High reliable bottom gate amorphous gallium indium zinc oxide (a-GIZO) thin-film transistors (TFTs) have been fabricated by using the double active layers. Top and bottom layers were CuGaInZnO (CGIZO) and GIZO, respectively. When the plasma-enhanced processes were introduced during fabrication of the TFTs, the TFT with a-GIZO single active layer did not exhibit electrically reliable performance due to forming the conducting surface layer from the plasma damages. The double-active-layer TFT with a CGIZO layer had the reliable performance (μ FE of 5.1 cm 2 /V s, V th of 3.25 V, subthreshold gate swing value of 0.68 V/decade, I off of 3.8 X 10 -12 A) even under the same processes. This suggested that the Cu atom of CGIZO layer suppressed the carrier concentration during plasma-enhanced processes. The TFTs with double active layer showed excellent stability, which has the threshold voltage shift of

Published
2009

2. Self-Consistent Technique for Extracting Density of States in Amorphous InGaZnO Thin Film Transistors.

Author

Jun-Hyun Park, Kichan Jeon, Sangwon Lee, Sangwook Kim, Sunil Kim, Ihun Song, Jaechul Park, Youngsoo Park, Chang Jung Kim, Dong Myong Kim, and Dae Hwan Kim

Subjects
INDIUM, GALLIUM, ZINC oxide thin films, THIN film transistors, PHOTONS, DENSITY, BOUNDARY value problems, ITERATIVE methods (Mathematics)
Abstract

The self-consistent technique for extracting density of states [DOS: g(E)] in an amorphous indium gallium zinc oxide (a-IGZO) thin film transistor is proposed and demonstrated. The key parameters are the g(E) of the a-IGZO active layer and the intrinsic channel mobility (μch). While the energy level (E) is scanned by the photon energy and gate-to-source voltage (VGS) sweep, its density is extracted from an optical response of capacitance-voltage characteristics. Using the Vos-dependent μch as another boundary condition, a linearly mapped DOS assuming a linear relation between VGS and E is translated into a final DOS by fully considering a nonlinear relation between VGS and E. The final DOS is finally extracted and verified by finding the self-consistent solution satisfying both the linearly mapped DOS and the measured VGS dependence of μch with the numerical iteration of a DOS-based μch model. The extracted final DOS parameters are NTA = 1.73 x 1017 cm-3 eV-1, NDA = 3.5 x 1015 cm-3 eV-1, kTTA = 0.023 eV, kTDGA = 1.2 eV, and EO = 1.7 eV with the formula of exponential tail states and Gaussian deep states. [ABSTRACT FROM AUTHOR]

Published
2010
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