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The strong demands for “high-power” w-LEDs stimulate development of the all-inorganic glass ceramic (GC) phosphors with admirable thermal/chemical reliabilities. Herein, an ultra-low melting Sn-P-F-O glass was successfully prepared, demonstrating as an appropriate host to accommodate yellow YAG:Ce3+ and red CASN:Eu2+ without degrading their original luminescent properties. The yellow and red GCs yield QE as high as 92.0% and 88.6%, respectively. Moreover, they exhibit excellent resistance to thermal quenching, i.e., only 9.5% and 3.0% decreases in luminescence intensity at 150 °C compared with that at room temperature. Remarkably, LED using the YAG:Ce3+/CASN:Eu2+ co-sintered GC as color converter yields bright warm white light with CCT of 3554 K, under 350 mA current, highlighting a new record in LE of 90.71 lm/W among the GC-based warm w-LEDs. Accelerated experiments demonstrate the presently studied GC also exhibits a superior thermal stability, therefore is capable for operating at high power condition for a long time.

In this work, electrophoretic deposition (EPD) technique was employed for fabricating the barium titanate (BaTiO 3 ) films on the Si substrate modified with the ordered conducting polyaniline (PANI) layers. Firstly, surface polymerization of ordered conducting PANI layers on the Si substrate modified with the aniline-bearing silane self-assembled monolayer was performed by polymerization of aniline monomer in an acidic aqueous solution. Then, EPD of BaTiO 3 films was fulfilled using the conducting PANI layers coated Si wafer as the cathode. The analytical results demonstrate that the crack-free, relatively dense and smooth BaTiO 3 films have been accomplished on the PANI layers modified Si substrate with the appropriate suspension concentration and the deposited film thickness can be changed expediently by adjusting EPD process parameters. This method provides a potential route for fabricating ceramic films on the non-conductive Si or glass substrates using EPD technique.