1. Wavelength stable, p-side-down green light emitting diodes grown by molecular beam epitaxy
- Author
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Scott Newman, Jonathan Wright, Hongen Shen, Meredith Reed, Ryan Enck, Chad S. Gallinat, Anand V. Sampath, and Michael Wraback
- Subjects
Materials science ,business.industry ,Process Chemistry and Technology ,Wide-bandgap semiconductor ,Heterojunction ,Electron ,Green-light ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,law.invention ,Condensed Matter::Materials Science ,Wavelength ,law ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Instrumentation ,Diode ,Light-emitting diode ,Molecular beam epitaxy - Abstract
p-side-down, single heterostructure n-InGaN/p-GaN light emitting diodes grown by molecular beam epitaxy exhibited stable peak emission wavelengths as long as 550 nm for current densities in excess of 100 A/cm2, and minimal efficiency droop up to 150 A/cm2 without the use of an electron blocking layer. This behavior is consistent with the formation of a two-dimensional hole gas in the n-InGaN layer and a higher barrier to electron overflow in the conduction band due to the negative polarization charge at the n-InGaN/p-GaN interface.
- Published
- 2013