1. Extremely low resistance Au/Mn/Ni/Au ohmic contact to p-GaAs
- Author
-
Georges Salmer, Hussein Fawaz, André Leroy, and Jean-Francois Thiery
- Subjects
Auger electron spectroscopy ,Materials science ,Electrical resistivity and conductivity ,Annealing (metallurgy) ,Contact resistance ,Metallurgy ,General Engineering ,Analytical chemistry ,Semiconductor device ,Atmospheric temperature range ,Ohmic contact ,Electron beam physical vapor deposition - Abstract
p‐type alloyed ohmic contacts of Au/Mn/Ni/Au have been fabricated for application to compound semiconductor devices. Extremely low resistance contacts to 3×1019 cm−3 Be‐doped p‐GaAs were achieved by electron‐beam evaporation and rapid thermal annealing. Contacts were thermally stable, and the contact resistance remained below 0.04 Ω mm in the temperature range from 360 to 450 °C. Annealing at 400 °C for 40 s resulted in a minimum contact resistance of 0.012 Ω mm, corresponding to a specific resistivity of 1.6×10−8 Ω cm2, which is very close to the theoretical predictions. The mechanism of formation of Au/Mn ohmic contacts was discussed, based on Auger electron spectroscopy data.
- Published
- 1995