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The adhesion force between individual human hair fibers in a crosshair geometry was measured by observing their natural bending and adhesive jumps out of contact, using optical video microscopy. The hair fibers' natural elastic responses, calibrated by measuring their natural resonant frequencies, were used to measure the forces. Using a custom-designed, automated apparatus to measure thousands of individual hair-hair contacts along millimeter length scales of hair, it was found that a broad, yet characteristic, spatially variant distribution in adhesion force is measured on the 1 to 1000 nN scale for both clean and conditioner-treated hair fibers. Comparison between the measured adhesion forces and adhesion forces modeled from the hairs' surface topography (measured using confocal laser profilometry) shows they have a good order-of-magnitude agreement and have similar breadth and shape. The agreement between the measurements and the model suggests, perhaps unsurprisingly, that hair-hair adhesion is governed, to a first approximation, by the unique surface structure of the hairs' cuticles and, therefore, the large distribution in local mean curvature at the various individual contact points along the hairs' lengths. We posit that haircare products could best control the surface properties (or at least the adhesive properties) between hairs by directly modifying the hair surface microstructure.

We have investigated the selective photoactivated room temperature chemical vapor deposition (CVD) of aluminum (Al) on functionalized self-assembled monolayers adsorbed on Au. The CVD precursor employed is trimethyl aluminum (TMA). Using a deuterium arc lamp we demonstrate that the rate of the Al film growth is approximately twice that observed for nonphotoactivated Al chemical vapor deposition (CVD) using TMA. At the wavelengths employed, the photolysis of TMA leads to the dissociation of the TMA dimer to its monomer followed by successive release of methyl groups to form (CH(3))(3-x)Al. The photogenerated (CH(3))(3-x)Al species react with -OH- and -COOH-terminated SAMs but not -CH(3)-terminated SAMs. Using these reactions we demonstrate that aluminum can be selectively deposited on -CH(3)/-COOH-patterned SAMs. The possible reaction mechanisms involved in the Al film growth are discussed. These results indicate that photoactivated CVD (laser CVD) processes are suitable for the deposition of stable films of metals and other materials on organic films.

We have investigated the selective electroless deposition (ELD) of Cu on functionalized self-assembled monolayers (SAMs). Previous studies have demonstrated that Cu deposits on -COOH and -CH(3) terminated SAMs using ELD. However, the deposited films were rough and contained irregular crystallites. Further, the copper penetrated through the film. In this Article, we demonstrate that copper can be selectively deposited on -COOH terminated SAMs with improved morphology and without penetration of copper through the organic layer. The method employs a Cu(II) seed layer and an additive, adenine or guanine. We demonstrate the efficacy of the technique on photopatterned -CH(3)/-COOH SAMs. Copper is observed to deposit only atop the -COOH terminated SAM area and not on the -CH(3) terminated SAM. The use of a Cu(II) seed layer increased the Cu ELD rate on both -COOH and -CH(3) terminated SAMs. The deposited copper layer strongly adheres to the -COOH terminated SAMs because the copper layer nucleates at Cu(2+)-carboxylate complexes. In contrast, the deposited copper layer can easily be removed from the -CH(3) terminated SAM surface because there is no specific copper-surface interaction. The additives adenine and guanine mediate the interaction of Cu(2+) and the deprotonated -COOH terminated SAMs via the formation of additive-carboxylate complexes. These complexes lead to significantly reduced copper penetration through the SAM. In the case of adenine, the diffusion of copper through the organic film was eliminated. This new technique for copper deposition will facilitate the development of inexpensive molecular electronics, sensors, and other nanotechological devices.