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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications. [ABSTRACT FROM AUTHOR]

Ultrafast laser welding is a fast, clean, and contactless technique for joining a broad range of materials. Nevertheless, this technique cannot be applied for bonding semiconductors and metals. By investigating the nonlinear propagation of picosecond laser pulses in silicon, it is elucidated how the evolution of filaments during propagation prevents the energy deposition at the semiconductor–metal interface. While the restrictions imposed by nonlinear propagation effects in semiconductors usually inhibit countless applications, the possibility to perform semiconductor–metal ultrafast laser welding is demonstrated. This technique relies on the determination and the precompensation of the nonlinear focal shift for relocating filaments and thus optimizing the energy deposition at the interface between the materials. The resulting welds show remarkable shear joining strengths (up to 2.2 MPa) compatible with applications in microelectronics. Material analyses shed light on the physical mechanisms involved during the interaction. [ABSTRACT FROM AUTHOR]