Search

All‐dielectric nanophotonic devices are usually fabricated by engraving arrays of nanoholes at the surface of high‐index materials, to engineer dedicated optical functions. However, their direct 3D integration in the volume of a material is challenging, inaccessible to current planar nanolithography methods. Here is introduced an ultrafast laser‐machining method that opens the possibility to realize scalable arrays of hollow nanochannels directly inside the bulk of silica glass within a single‐step, maskless, and digital approach. Using a custom‐shaped micro‐Bessel beam and by tuning laser pulse durations from femtoseconds to picosecond to boost processing versatility, dense assemblies of nanochannels with adjustable lengths (up to 30 µm), and submicron lattice periodicity (down to 0.7 µm) are achieved. As a proof‐of‐principle demonstration, a gradient‐index metaphotonic structure is realized and its performance is experimentally characterized, demonstrating its relevancy for imprinting phase functions with magnitude up to π/2$\pi /2$ in the short‐wave infrared spectral range. Results show that the unique flexibility and scalability provided by individual control of each channel opens a new realistic alternative approach for 3D fabrication of monolithic integrated nanophotonic devices inside a wide range of low‐index standard optical materials. [ABSTRACT FROM AUTHOR]

Using lasers to achieve controlled crystallographic phase changes in silicon with high spatial precision promises new manufacturing solutions in semiconductor technologies, including silicon photonics. Recent demonstrations of improved amorphization thicknesses position ultrafast lasers as an optimum tool to meet current challenges. Here, the literature on silicon transformations is reviewed and complemented with new experimental data. This includes amorphization and ablation response as a function of pulse duration (τ = 13.9 to 134 fs at λ = 800 nm) and laser wavelength (λ = 258 to 4000 nm with τ = 200 fs pulses). For pulse duration‐dependent studies on Si(111), the amorphization fluence threshold decreases with shorter durations, emphasizing the significance of non‐linear absorption in the range of considered conditions. For wavelength‐dependent studies, the amorphization threshold increases sharply from λ = 258 to 1030 nm, followed by near‐constant behavior up to λ = 3000 nm. Conversely, the ablation threshold fluence increases in these specified ranges. Differences in the obtained amorphization thicknesses on Si(111) and Si(100) are also discussed, identifying an anomalously large fluence range for amorphization at λ = 258 nm. Finally, the question of the lateral resolution, shown as independent of the interaction nonlinearity is addressed. [ABSTRACT FROM AUTHOR]