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Kerr frequency combs enable the miniaturization of comb sources for applications such as data communications and spectroscopy. However, due to the high field confinement and effective nonlinearity, Kerr combs typically operate with low output comb powers. While nonsolitonic Kerr combs operating in the normal group velocity dispersion (GVD) regime can access high pump‐to‐comb conversion efficiencies and relatively flat spectral profiles, many frequency comb applications require even higher comb‐line powers that are otherwise fundamentally unattainable without the use of optical amplifiers. A high efficient coherent beam combining of Kerr combs is demonstrated via on‐chip synchronization to greatly enhanced comb‐line powers. Two normal GVD Kerr combs are coherently combined for a 2.9 dB increase in comb power compared to a single comb while maintaining a high total pump‐to‐comb conversion efficiency of 26%. Lastly, it is shown that via spectral engineering of two normal GVD combs, it should be possible to significantly increase the spectral flatness of a combined comb. This platform enables fully integrated systems with powers that can readily exceed that of an individual comb system by more than an order of magnitude. [ABSTRACT FROM AUTHOR]

Low propagation loss in high confinement waveguides is critical for chip‐based nonlinear photonics applications. Sophisticated fabrication processes which yield sub‐nm roughness are generally needed to reduce scattering points at the waveguide interfaces to achieve ultralow propagation loss. Here, ultralow propagation loss is shown by shaping the mode using a highly multimode structure to reduce its overlap with the waveguide interfaces, thus relaxing the fabrication processing requirements. Microresonators with intrinsic quality factors (Q) of 31.8 ± 4.4 million are experimentally demonstrated. Although the microresonators support ten transverse modes only the fundamental mode is excited and no higher order modes are observed when using nonlinear adiabatic bends. A record‐low threshold pump power of 73 µW for parametric oscillation is measured and a broadband, almost octave spanning single‐soliton frequency comb without any signatures of higher order modes in the spectrum spanning from 1097 to 2040 nm (126 THz) is generated in the multimode microresonator. This work provides a design method that can be applied to different material platforms to achieve and use ultrahigh‐Q multimode microresonators. [ABSTRACT FROM AUTHOR]

High‐speed electro‐optic modulators are key components in modern communication networks and various applications that require chip‐scale modulation with large bandwidth, high modulation efficiency, and compact footprint. However, fundamental trade‐offs make it challenging to achieve these metrics simultaneously, and thus new methodologies must be explored. To this end, a Mach–Zehnder modulator harnessing slow‐light waveguides and capacitively loaded slow‐wave electrodes are presented on silicon‐nitride‐loaded lithium niobate on an insulator platform. The increased group index and reduced microwave loss significantly improve the modulation efficiency. With the 1‐mm‐length modulation section, a low half‐wave voltage length product Vπ·L of 0.21 V cm is obtained, which is one order of magnitude smaller than that of conventional thin film lithium niobate Mach–Zehnder modulators, and a modulation bandwidth of surpassing 110 GHz is achieved. The digital signal processor‐free non‐return‐to‐zero signal and eight‐level pulse amplitude modulation signal of up to 180 and 300 Gbps, respectively, are generated by the modulator, which provides ultra‐large bandwidth, ultra‐high efficiency, and a compact solution for next‐generation electro‐optic systems. [ABSTRACT FROM AUTHOR]