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A novel method for preparing aluminum/aluminum nitride ceramics (Al/AlN) substrates is proposed in this paper. The method included two processes: (1) the surface of AlN was coated with a CuO thick film and sintered; (2) Al foil was put on the pretreated (in process 1) AlN surface and bonded to AlN through pre-heating at 400 °C and final heating at 660 °C in N 2 -H 2 reduction atmosphere. The experimental results obtained by optical and scanning electron microscope (SEM) observations as well as by X-ray diffraction analysis at the cross-sections of the joints and the fracture surfaces, suggest that the reaction mechanism starts with the reaction of CuO with AlN to form CuAlO 2 , when the AlN coated with CuO is heat-treated at high temperature. A Cu layer is produced by the reduction of CuO and Cu diffuses in the Al foil, forming strong Al/AlN joints. Elongated crystals of Al 2 Cu are developed in the reaction zone at the interface between Al and AlN. The results of mechanical tests showed that the peeling-off strength of the Al foil from the surface of the AlN substrate reached a value of 15.4 MPa for the Al/AlN couples produced after 30 min of heat treatment at 660 °C. [ABSTRACT FROM AUTHOR]

Abstract: The production of composites of epoxy molding compounds (EMCs), which can feature a good balance between thermal conductivity and flame-retardant behavior in terms of flammability and burning behavior, was achieved by incorporating high thermal conductivity Si3N4 and flame retardant Al(OH)3 (ATH) fillers in the epoxy matrix. The experimental results were obtained from thermal conductivity measurements and limiting oxygen index (LOI) and UL-94 tests. These results showed that the Si3N4 filler has a great influence on thermal conductivity, which markedly increased for Si3N4 volume fractions >40%, whereas the ATH filler greatly improved the flame resistance of EMCs. The simultaneous presence of both Si3N4 and ATH fillers in the EMCs positively influenced both properties. The aim of this study was to produce composites suitable for electronic packaging applications: an optimum combination of the two fillers was determined for a total volume fraction of fillers in EMC of 60vol.% and a volume ratio of Si3N4:ATH at 3:2; this composite had a thermal conductivity of 2.15W/mK, an LOI of 53.5, and a UL-94 vertical burning test ranking of V-0. [Copyright &y& Elsevier]