1. InSe/Te van der Waals Heterostructure as a High-Efficiency Solar Cell from Computational Screening.
- Author
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Ma, Zechen, Li, Ruifeng, Xiong, Rui, Zhang, Yinggan, Xu, Chao, Wen, Cuilian, and Sa, Baisheng
- Subjects
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SOLAR cells , *ELECTRONIC band structure , *BAND gaps , *PHOTOVOLTAIC power systems , *ELECTRONIC structure , *LIGHT absorption - Abstract
Designing the electronic structures of the van der Waals (vdW) heterostructures to obtain high-efficiency solar cells showed a fascinating prospect. In this work, we screened the potential of vdW heterostructures for solar cell application by combining the group III–VI MXA (M = Al, Ga, In and XA = S, Se, Te) and elementary group VI XB (XB = Se, Te) monolayers based on first-principle calculations. The results highlight that InSe/Te vdW heterostructure presents type-II electronic band structure feature with a band gap of 0.88 eV, where tellurene and InSe monolayer are as absorber and window layer, respectively. Interestingly, tellurene has a 1.14 eV direct band gap to produce the photoexcited electron easily. Furthermore, InSe/Te vdW heterostructure shows remarkably light absorption capacities and distinguished maximum power conversion efficiency (PCE) up to 13.39%. Our present study will inspire researchers to design vdW heterostructures for solar cell application in a purposeful way. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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