1. A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches
- Author
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Shao-Yen Chiu, King-Poul Zhu, Jung-Hui Tsai, and Ying-Cheng Chu
- Subjects
Materials science ,Input offset voltage ,Heterostructure-emitter bipolar transistor ,business.industry ,Transistor ,Bipolar junction transistor ,Heterojunction ,Electron ,Double heterostructure ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,law.invention ,Condensed Matter::Materials Science ,law ,Optoelectronics ,General Materials Science ,business ,Common emitter - Abstract
A functional InGaP/GaAs double heterostructure-emitter bipolar transistor (DHEBT) is fabricated and demonstrated. Due to the large valence band discontinuity to conduction band discontinuity ratio at InGaP/GaAs heterojunction and the symmetrical structure, excellent transistor performances with a high current gain of 195 and a low collector–emitter (C–E) offset voltage of 60 mV are achieved. In particular, attributed to the avalanche multiplication and confinement effect for electrons at InGaP/GaAs heterojunction, an interesting multiple S-shaped negative-differential-resistance (NDR) switches is observed under large C–E forward voltage.
- Published
- 2004
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