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• A new P-type transparent conductive LaSe 2 film with excellent photoelectric properties is found. • A novel two-step method is used to prepare LaSe 2 film. • Effect of annealing time on their photoelectric properties is investigated. • Results indicate that the best annealing time is 2 h. LaSe 2 films were prepared on sapphire (0001) substrates by combining magnetron sputtering and selenized annealing. The influence of selenized annealing time on the structures and photoelectric properties of the thin films were investigated using glancing incident X-ray diffraction, fourier transform infrared spectrometry and Hall effect measurements. The results showed that the film had a perfect monoclinic structure and a smooth surface morphology. The average transmittance in the mid-infrared range was greater than 55%, and the highest was 65%. The LaSe 2 films had a higher carrier concentration (∼1019 cm−3) and conductivity (∼1.9 S/cm) than those of other P-type transparent conductive films, which showed that LaSe 2 was a potential new P-type material. [ABSTRACT FROM AUTHOR]

The nano-thick BaSnO 3 /Cu/BaSnO 3 multilayer structures have been designed and deposited onto glass substrates by magnetron sputtering at room temperature to develop an indium free transparent composite electrode. The effects of Cu mid–layer on structural, electrical and optical properties of BaSnO 3 /Cu/BaSnO 3 multilayer composite structures were investigated. As the Cu layer thickness increases, the resistivity decreases. The lowest resistivity value of 7.9×10 −5 Ω cm with a carrier concentration of 1.2×10 22 cm −3 was obtained in the Cu layer with optimum thickness (9 nm). The multilayer film has been optimized to obtain an average optical transmittance of ~81% in the visible range of wavelengths, while the figure of merit (FOM) reached a maximum of 14.6×10 −3 Ω −1 . [ABSTRACT FROM AUTHOR]