1. TEM characterization of an epitaxial CrO2 film deposited by the CVD method and the transition interface.
- Author
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Liu, Xiaoyu, Yang, Tianzhong, Lang, Peilin, Yao, Yuan, Shen, Xi, and Yu, Richeng
- Subjects
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ELECTRON energy loss spectroscopy , *CHEMICAL vapor deposition , *TRANSMISSION electron microscopy , *ALUMINUM oxide , *EPITAXY , *DIFFRACTION patterns - Abstract
• Good epitaxial growth among substrate, Cr 2 O 3 interlayer and crystalline CrO 2 film. • There is a higher oxygen concentration between the Cr 2 O 3 film and substrate. • The Cr 2 O 3 interlayer may be inevitable for generating CrO 2. Epitaxial chromium dioxide (CrO 2) film was grown on sapphire Al 2 O 3 by the chemical vapor deposition (CVD) method. The interfacial structure of the epitaxial CrO 2 was characterized by transmission electron microscopy (TEM), and the spatial distribution of the chromium valence in the film was qualitatively analyzed by electron energy loss spectroscopy (EELS). An uneven transition layer with a diffraction pattern consistent with that of Cr 2 O 3 but with an anomalously large oxygen concentration (Cr/O ≈ 0.2–0.3) was found between the CrO 2 film and the substrate. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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