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CZTSSe thin films based on three-layer precursors with Cu-poor and Zn-rich in top and bottom layer while stoichiometric in middle layer were prepared. Compared with CZTSSe thin film obtained from a stoichiometric single layer precursor, the crystallization of thin film from a three-layer precursor got enhanced. Element distribution and growth nuclei position in precursor played an important role on CZTSSe thin film formation and solar cell performance. The conversion efficiency of CZTSSe solar cell from a three-layer precursor attained an increase of 3.54% over that from a single layer precursor. [ABSTRACT FROM AUTHOR]

Abstract: Cu2SnS3 (CTS) nanoparticles were rapidly fabricated by microwave irradiation using l-cysteine as sulfur source. The phase structure, shape and composition of the CTS nanoparticles were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS), respectively. The results showed that the phase of as-obtained CTS nanoparticles was cubic and the nanoparticles presented a hollow structure. A vesicle-template mechanism was proposed to explain the formation mechanism of the hollow CTS nanoparticles. UV–vis absorption spectra showed that the hollow CTS nanoparticles possess direct band gap energy of 1.25eV. [Copyright &y& Elsevier]

Abstract: Cu2FeSnS4 nanocrystals were rapidly fabricated by ultrasound-assisted microwave irradiation using thioacetamide as a sulfur source. The phase structure, shape and composition of Cu2FeSnS4 nanocrystals were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and energy dispersive spectrometer (EDS), respectively. The results showed that the phase of as-obtained Cu2FeSnS4 nanocrystals was stannite and the average size was about 5nm. UV–vis absorption spectrum showed that the band gap of Cu2FeSnS4 nanocrystals was about 1.35eV. [Copyright &y& Elsevier]