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• A new P-type transparent conductive LaSe 2 film with excellent photoelectric properties is found. • A novel two-step method is used to prepare LaSe 2 film. • Effect of annealing time on their photoelectric properties is investigated. • Results indicate that the best annealing time is 2 h. LaSe 2 films were prepared on sapphire (0001) substrates by combining magnetron sputtering and selenized annealing. The influence of selenized annealing time on the structures and photoelectric properties of the thin films were investigated using glancing incident X-ray diffraction, fourier transform infrared spectrometry and Hall effect measurements. The results showed that the film had a perfect monoclinic structure and a smooth surface morphology. The average transmittance in the mid-infrared range was greater than 55%, and the highest was 65%. The LaSe 2 films had a higher carrier concentration (∼1019 cm−3) and conductivity (∼1.9 S/cm) than those of other P-type transparent conductive films, which showed that LaSe 2 was a potential new P-type material. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • A novel two-step method is developed to grow 2D Mg(OH) 2 nanoflakes. • The proposed method is environmentally benign. • The method does not require catalysts or harsh acid-base conditions. • The Mg(OH) 2 films had a crystalline hexagonal structure is dominant. • The water contact angle of 139° showed the good hydrophobicity of the film. Abstract A novel and environmentally benign two-step method has been developed to grow 2D magnesium hydroxide (Mg(OH) 2) nanoflakes. Our method relies on the deposition of Mg films by magnetron sputtering, followed by reaction with water vapor, and does not require any catalyst or harsh acid-base conditions. The 2D nanoflake surface morphology with a crystalline hexagonal structure was dominant on the Mg(OH) 2 films. The water contact angle on the film was ∼139°, which testified the good hydrophobicity of Mg(OH) 2 films due to the nanoflake surface. The self-cleaning effect of contaminant particles on hydrophobic Mg(OH) 2 films was analyzed. Compared with other preparation methods, this two-step method is more efficient, cleaner, and simpler, which make it suitable for complex or large-area substrate surfaces. In addition, this method can be applied to other metal hydroxides or oxides. [ABSTRACT FROM AUTHOR]

The hydrated magnesium-carbon films fabricated in this study are the novel-innovative non-oxide-type transparent electronic material. The films, which have a structure similar to that of magnesium hydroxide, were produced by making Mg x -C y films deposited by magnetron co-sputtering react with water vapor. As the extrinsic defect of hydration magnesium-carbon films, C atoms provided redundant electrons, resulting in a conductivity of approximately 3.31 × 10 −2  Ω·cm. Although the conductivity of hydrated magnesium-carbon films is not prominent comparing to the conventional and widely-used n-type TCO materials, e.g. ITO, the films also showed excellent optical properties, which can be attributed to their low bond energy, with the infrared transmittance of the films being greater than 72% for a plasma wavelength of approximately 10 μm. By varying the atomic C content of the films, a visible-region transmittance greater than 80% could be realized. The optical bandgap of the films was approximately 4.04–6.87 eV and was blue-shifted because of the Moss-Burstein effect. [ABSTRACT FROM AUTHOR]

• A self-powered vertical heterojunction photodetector based on n-SnOx/p-diamond was fabricated by RF sputtering. • The device has a peak response at 350 nm and responds to light wavelength in the 250–500 nm range at zero bias. • Analysis of the detection mechanism of the n-SnOx/p-diamond heterojunction photodetector. High-performance self-powered UV-blue photodetector was fabricated based on n-SnO x /p-diamond heterojunction. The SnO x film was deposited on the high temperature and high pressure synthetic boron doped diamond wafer by RF magnetron sputtering. This heterojunction device exhibits a good rectification behavior with a rectification ratio of 3.15 × 104 at ±3 V. At zero bias, the device responds in the wavelength ranging from 250 nm to 500 nm with a peak response at 350 nm. The photoresponse rise time and decay time of the device are both less than 2 s under UV-blue illumination with different wavelengths. These results demonstrate that the n-SnO x /p-diamond heterojunction device has potential applications in the field of UV-blue detection. [ABSTRACT FROM AUTHOR]