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Abstract: Bi4Ti3O12 (BIT) ferroelectric thin films with Dy3+ substitution (Bi4−x Dy x Ti3O12, x =0, 0.2, 0.4, 0.6, 0.8 and 1.0, respectively) were grown on Pt(111)/Ti/SiO2/Si(100) substrates using sol–gel method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) revealed that after annealing at 710 °C for 10 min, all Bi4−x Dy x Ti3O12 films became polycrystallites. Among all the deposited thin films, the Bi3.4Dy0.6Ti3O12 specimen exhibits improved ferroelectric properties with the largest average remanent polarization (2Pr) of 53.06 μC/cm2 under applied field of 400 kV/cm and fatigue free characteristics (16% loss of 2Pr after 1.5×1010 switching cycles), indicating that it is suitable for non-volatile ferroelectric random access memories applications. [Copyright &y& Elsevier]

Abstract: The magnetoelectric (ME) Pb(Zr0.52Ti0.48)O3–La0.65Sr0.35MnO3 (PZT–LSMO) composite thin films were grown on single crystalline SrTiO3 substrates by the pulse laser deposition (PLD) method with different growth sequences of PZT and LSMO yielding the following layered structures: PZT/LSMO/substrate (PL) and LSMO/PZT/substrate (LP). The experimental results show that these composite films exhibit both good ferroelectric and magnetic properties, as well as magnetoelectric effects at room temperature. The layer sequences have an obvious influence on the magnetoelectric coupling behavior of these double-layered thin films. The maximum values of ME voltage coefficient for the PL thin film is larger than the LP structure, which may be caused by the substrate clamping and interface bonding of PZT and LSMO. [Copyright &y& Elsevier]

• Monolayer MoO 3 /MoO x were prepared by plasma oxidation and atomic layer etching. • The proposed process can precisely control the thickness of molybdenum oxide. • The prepared monolayer molybdenum oxide has good surface morphology and uniformity. In this letter, we propose two different methods to prepare monolayer MoO 3 and MoO x by low-temperature inductively coupled plasma etching technology. The monolayer MoO 3 is obtained by soft oxygen plasma oxidation of monolayer MoS 2 due to the high specific surface area. The monolayer MoO x is prepared through plasma oxidation and atomic layer-by-layer etching of multilayer MoS 2 due to the weak van der Waals interaction between the layers. It is proved that the prepared monolayer molybdenum oxide has good surface morphology and highly controllable components. The proposed process can precisely control the thickness of molybdenum oxide and has good uniformity and higher selectivity. This work could promote the application of atomically thin transition metal oxides in two-dimensional materials based electronic devices and its integration. [ABSTRACT FROM AUTHOR]