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• Monolayer MoO 3 /MoO x were prepared by plasma oxidation and atomic layer etching. • The proposed process can precisely control the thickness of molybdenum oxide. • The prepared monolayer molybdenum oxide has good surface morphology and uniformity. In this letter, we propose two different methods to prepare monolayer MoO 3 and MoO x by low-temperature inductively coupled plasma etching technology. The monolayer MoO 3 is obtained by soft oxygen plasma oxidation of monolayer MoS 2 due to the high specific surface area. The monolayer MoO x is prepared through plasma oxidation and atomic layer-by-layer etching of multilayer MoS 2 due to the weak van der Waals interaction between the layers. It is proved that the prepared monolayer molybdenum oxide has good surface morphology and highly controllable components. The proposed process can precisely control the thickness of molybdenum oxide and has good uniformity and higher selectivity. This work could promote the application of atomically thin transition metal oxides in two-dimensional materials based electronic devices and its integration. [ABSTRACT FROM AUTHOR]