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Abstract: Variations in the local crystallographic orientation due to the presence of geometrically necessary dislocations and dislocation boundaries smear the distribution of intensity near Laue reflections. Here, some simple model distributions of geometrically necessary dislocations, GNDs, are used to estimate the dislocation tensor field from the intensity distribution of Laue peaks. Streaking of the Laue spots is found to be quantitatively and qualitatively distinct depending on the ratio between the absorption coefficient and the GND density gradient. In addition, different slip systems cause distinctly different Laue-pattern streaking. Experimental Laue patterns are therefore sensitive to stored dislocations and GNDs. As an example, white beam microdiffraction was applied to characterize the dislocation arrangement in a deformed polycrystalline Ni grain during in situ uniaxial tension. [Copyright &y& Elsevier]