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• Ag-doped chitosan as function layer was employed to develop the bio-memristor. • A current–voltage (I-V) hysteresis with a typical capacitive effect is impressively observed. • Nonvolatile data storage is feasible using the non-zero-crossing I-V hysteresis. • The evolution of the resistive behavior of the memristor is observed. Three flexible transparent transient memristors based on degradable natural chitosan coating films are reported. The Mg/Ag-doped chitosan/ITO sandwich structures were prepared by spin coating and drop coating, respectively. The plane structure device was also prepared. Three kinds of device exhibit different memory behaviors, namely, bipolar resistive switching behavior and butterfly resistive switching behavior accompanied by capacitance and negative resistance effect. The elucidated behavior of the bipolar resistive switching can be attributed to filament conduction. The behavior of the butterfly resistive switching is attributed to interface effects. In addition, the three devices have a large on/off ratio and long data retention time, showing promising non-volatile memory characteristics in flexible memory applications. The switching mechanism was evaluated by Schottky emission, hopping and direct tunneling. The transient memristor device prepared in this paper has excellent transient characteristics and controllable performance. This work reveals the potential of biodegradable flexible electronic devices. [ABSTRACT FROM AUTHOR]

[Display omitted] • The asymmetric gate design was used to suppress the inherent ambipolarity of graphene. • Combined with chemically doped method to suppress the off state current of graphene transistors. • The on-state current is increased while the off-state current is effectively suppressed. • The on/off ratio is increased by nearly two orders of magnitude compared with the normal gate structure device. • Better threshold swing and smaller threshold voltage are obtained. Graphene is considered a promising transistor component for future integrated circuits. Due to high operating speed and low power consumption, high on/off ratio and low off state current are ideal transistors. However, due to the inherent ambipolarity of graphene, a significant ambipolarity behavior with a fairly high off state current is usually observed in graphene transistors. In this work, an asymmetric gate design combined with a chemically doped method to suppress the ambipolarity of graphene transistors was reported. Thus, the off-state current is effectively reduced and the on-state current is increased. The on/off ratio is increased by nearly two orders of magnitude. Compare to the normal gate structure device, better threshold swing and smaller threshold voltage are obtained. [ABSTRACT FROM AUTHOR]

• A layered materials memristor was introduced. • Memristors characteristic was modulated by hexazinone. • Gradual current changes were took on. • The memory device demonstrate programmable peculiarities. The nonvolatile resistive switching memory devices and the effect of adsorbed small molecule hexazinone have been investigated. Resistive switching behaviour of Co-Al layered double hydroxides (Co-Al LDHs)-based is gradually varied. At the same time, when Co-Al LDHs adsorbed the small molecule hexazinone, its resistive switching behaviour changed suddenly. Both memristors exhibit non-volatile data storage and good data retention characteristics. The influence of small molecule hexazinone on microcarrier transport was analyzed. This research manifests the promising potential of nanocomposite materials adsorbed electroactive small molecules in rectifying the resistive switching properties and provides some ideas for designing advanced devices of nanocomposite memristors. [ABSTRACT FROM AUTHOR]