Search

Abstract: In this work we present a structural, optical and electrical characterization of Si x C1−x /SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100°C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R&T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R&T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC y O z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers. [Copyright &y& Elsevier]

Abstract: Silicon carbide and silicon rich carbide (SiC and SRC) thin films were prepared by PECVD and annealed at 1100°C. Such a treatment, when applied to SiC/SRC multilayers, aimed at the formation of silicon nanocrystals, that have attracted considerable attention as tunable band-gap materials for photovoltaic applications. Optical and structural techniques (X-ray photoelectron spectroscopy, Reflectance and Transmittance, Fourier Transformed Infrared Spectroscopy) were used to evidence the formation, during the annealing treatment in nominally inert atmosphere, of a parasitic ternary SiO x C y surface compound, that consumed part of the originally deposited material and behaved as a preferential conductive path with respect to the nanocrystal layer in horizontal electrical conductivity measurements. The SiO x C y compound was HF-resistant, with composition dependent on the underlying matrix. It gave rise to a Si-O related vibration in FTIR analysis, that may be misinterpreted as due to silicon oxide. The compound, if neglected, can affect the structural and electrical characterization of the material. To overcome this problem, a procedure is analyzed, based on the deposition of a sacrificial capping a-Si:H layer that partially oxidizes, and is removed by tetra methyl ammonium hydroxide (TMAH) after annealing. XPS analysis revealed that the resulting surface is mainly made up of SiC regardless of the composition of the underlying SRC layer. Subsequent SF6:O2 dry etching results in a porous SiC-rich surface layer. The proposed method is effective in controlling the SRC surface configuration, and allows the performance of reliable optical and electrical characterization. [Copyright &y& Elsevier]

Abstract: Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarkable higher room temperature dark conductivity is obtained in the multilayer that includes a boron doped well, rather than boron doped barrier, indicating efficient doping in the former case. Room temperature lateral dark conductivity up to 10−3 S/cm is measured on the multilayer with boron doped barrier and well. The result compares favorably with silicon dioxide and makes SiC encouraging for application in photovoltaic devices. [Copyright &y& Elsevier]