1. Hydrogen-assisted growth of one-dimensional tellurium nanoribbons with unprecedented high mobility
- Author
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Xu, Manzhang, Xu, Jinpeng, Luo, Lei, Wu, Mengqi, Tang, Bijun, Li, Lei, Lu, Qianbo, Li, Weiwei, Ying, Haoting, Zheng, Lu, Wu, Hao, Li, Qiang, Jiang, Hanjun, Di, Jun, Zhao, Wu, Zhang, Zhiyong, He, Yongmin, Zheng, Xiaorui, Gan, Xuetao, Liu, Zheng, Wang, Xuewen, Huang, Wei, School of Materials Science and Engineering, School of Electrical and Electronic Engineering, and CINTRA CNRS/NTU/THALES, UMI 3288
- Subjects
Chemical Vapor Deposition ,Materials [Engineering] ,Mechanics of Materials ,Mechanical Engineering ,General Materials Science ,2D Materials ,Condensed Matter Physics - Abstract
High-mobility van der Waals ambipolar semiconductors are promising in logic and reconfigurable circuits, integrated optoelectronic circuits, due to the excellent gate-controlled capability and effectively tunability of major charge carriers by electrostatic field. Controllable growth of high-quality ambipolar semiconductors with high mobility and stability is highly glamorous and indispensable for further research. Here, we demonstrate a straightforward space-confined chemical vapor deposition (CVD) method to synthesize high-quality quasi-one-dimensional (1D) tellurium (Te) nanoribbons (NRs). By introducing H2 into the gas flow, endothermic compound H2Te was generated from the reaction of liquid Te with H2, and consequently decomposed into elemental Te at low temperature. Further, the Te NRs have been utilized for in-situ fabrication of field-effect transistors (FETs) without transferring process. Ambipolar features are achieved using nickel (Ni) as an ohmic contact. More importantly, the mobilities of the Te NR transistor for hole/electron are as high as 1755/28.6 cm2V−1s−1 and 4024/278 cm2V−1s−1 at room temperature and under a temperature below 20 K, respectively. Our findings confirm the novel strategy for synthesizing 1D elemental semiconductors and their applications with ambipolar behaviors. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) Submitted/Accepted version The authors gratefully acknowledge financial support by National Key Research and Development Program of China (2020YFB2008501), the National Natural Science Foundation of China (61974120 and 11904289), Key Research and Development Program of Shaanxi Province (2020ZDLGY04-08, 2020GXLH-Z-027, and 2021JZ-43), the Natural Science Foundation of Shaanxi Province (2023-JC-YB-495 and 2022JQ-659), the Key Program for International Science and Technology Cooperation Projects of Shaanxi Province (2018KWZ-08), the Natural Science Foundation of Ningbo (202003N4003), the Fundamental Research Funds for the Central Universities (3102019PY004, 31020190QD010, and 3102019JC004), the start-up funds from Northwestern Polytechnical University, and open research fund of the State Key Laboratory of Organic Electronics and Information Displays. This work was also supported by National Research Foundation–Competitive Research Program NRF-CRP22-2019-0007 and NRF-CRP21-2018-0007, and supported by A*STAR under its AME IRG Grant (Project No. A2083c0052).
- Published
- 2023