141 results on '"Gessner T"'
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2. Modeling of TDDB in advanced Cu interconnect systems under BTS conditions
3. Influence of the additives argon, O 2, C 4F 8, H 2, N 2 and CO on plasma conditions and process results during the etch of SiCOH in CF 4 plasma
4. Simulation of TaN x deposition by Reactive PVD
5. Compact meta-material transmission line balun based on meander lines structure and MEMS technology
6. Analysis of the impact of different additives during etch processes of dense and porous low- k with OES and QMS
7. Evaluation of Air Gap structures produced by wet etch of sacrificial dielectrics: Critical processes and reliability of Air Gap formation
8. Roughness improvement of the CoSi 2/Si-interface for an application as buried silicide
9. Evaluation of air gap structures produced by wet etch of sacrificial dielectrics: Extraction of keff for different technology nodes and film permittivity
10. Cu/barrier CMP on porous low- k based interconnect schemes
11. Different approaches to integrate patterned buried CoSi 2 layers in SOI substrates
12. Impact of reducing resist stripping processes at elevated temperature on ULK and HM materials
13. Different SiH 4 treatments of CVD TiN barrier layers
14. Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applications
15. Scaling down thickness of ULK materials for 65 nm node and below and its effect on electrical performance
16. The current limits of the laser-acoustic test method to characterize low- k films
17. Novel low- k polycyanurates for integrated circuit (IC) metallization
18. Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials
19. Improvement of mechanical integrity of ultra low k dielectric stack and CMP compatibility
20. SiO2 aerogel ultra low k dielectric patterning using different hard mask concepts and stripping processes
21. Influence of SiH 4 on the WN x-PECVD process
22. CVD TiN layers as diffusion barrier films on porous SiO 2 aerogel
23. In situ high temperature synchrotron-radiation diffraction studies of silicidation processes in nanoscale Ni layers
24. Thermal conductivity of ultra low- k dielectrics
25. Experimental results on the integration of copper and CVD ultra low k material
26. Effect of annealing on the microstructure of ultrathin tungsten nitride diffusion barriers for copper metallization
27. Development of PECVD WN x ultrathin film as barrier layer for copper metallization
28. Investigation of long throw PVD of titanium films from polycrystalline targets with texture
29. Comparison of techniques to characterise the density, porosity and elastic modulus of porous low- k SiO 2 xerogel films
30. Application of combined thermal and electrical simulation for optimization of deep submicron interconnection systems
31. Comparative study of Cu and CuAl 0.3 wt.% films
32. Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma
33. Simulation of TaNx deposition by Reactive PVD
34. Roughness improvement of the CoSi2/Si-interface for an application as buried silicide
35. Different approaches to integrate patterned buried CoSi2 layers in SOI substrates
36. Different SiH4 treatments of CVD TiN barrier layers
37. Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performance
38. Conference organization
39. CVD TiN layers as diffusion barrier films on porous SiO2 aerogel
40. Development of PECVD WNx ultrathin film as barrier layer for copper metallization
41. Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel films
42. Comparative study of Cu and CuAl0.3 wt.% films
43. Influence of barrier and cap layer deposition on the properties of capped and non-capped porous silicon oxide
44. Simulation of the dielectric constant of aerogels and estimation of their water content
45. Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion
46. Electrical and adhesion properties of plasma-polymerised ultra-low k dielectric films with high thermal stability
47. Development of different copper seed layers with respect to the copper electroplating process
48. Investigation of the plasma treatment in a multistep TiN MOCVD process
49. High throughput, high quality dry etching of copper/barrier film stacks
50. Process and equipment simulation of dry silicon etching in the absence of ion bombardment
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