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Your search keyword '"Lin, Chia-Chun"' showing total 6 results
Start Over Author "Lin, Chia-Chun" Journal microelectronic engineering
6 results on '"Lin, Chia-Chun"'

5. Impact of dielectric crystallinity on the resistive switching characteristics of ZrTiO x -based metal–insulator-metal devices.

Author

Lin, Chia-Chun, Wu, Yung-Hsien, Hung, Tung-Hsuan, and Hou, Chin-Yao

Subjects
*DIELECTRICS, *CRYSTALLINITY, *SWITCHING theory, *ZIRCONIUM titanate, *METAL-insulator-metal devices, *ELECTRIC conductivity
Abstract

Highlights: [•] Investigate the impact of dielectric crystallinity on the performance of RRAM. [•] Provides more insights into the different conduction mechanisms for RRAM operation. [•] Amorphous ZrTiO x outperforms crystalline ZrTiO x for RRAM applications. [Copyright &y& Elsevier]

Published
2013
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6. MOS devices with tetragonal ZrO2 as gate dielectric formed by annealing ZrO2/Ge/ZrO2 laminate

Author

Wu, Yung-Hsien, Chen, Lun-Lun, Chen, Wei-Chia, Lin, Chia-Chun, Wu, Min-Lin, and Wu, Jia-Rong

Subjects
*METAL oxide semiconductors, *ZIRCONIUM oxide, *GERMANIUM, *PERMITTIVITY, *HEAT treatment, *HYSTERESIS, *DIELECTRIC films, *CRYSTAL grain boundaries
Abstract

Abstract: A Ge-stabilized tetragonal ZrO2 (t-ZrO2) film with permittivity (κ) of 36.2 was formed by depositing a ZrO2/Ge/ZrO2 laminate and a subsequent annealing at 600°C, which is a more reliable approach to control the incorporated amount of Ge in ZrO2. On Si substrates, with thin SiON as an interfacial layer, the SiON/t-ZrO2 gate stack with equivalent oxide thickness (EOT) of 1.75nm shows tiny amount of hysteresis and negligible frequency dispersion in capacitance–voltage (C–V) characteristics. By passivating leaky channels derived from grain boundaries with NH3 plasma, good leakage current of 4.8×10−8 A/cm2 at V g = V fb −1V is achieved and desirable reliability confirmed by positive bias temperature instability (PBTI) test is also obtained. [Copyright &y& Elsevier]

Published
2011
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