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Abstract: TaCN films were deposited using atomic layer deposition (ALD) using PDMAT and H2/Ar plasma. Calculations based on density functional theory (DFT) indicate a high energy barrier and a low reaction energy for reducing the +5 Ta oxidation state in the PDMAT precursor by using pure H radicals. Through the assistance of Ar radicals, low resistivity of TaCN films of 230μΩcm could be deposited by using H2/Ar plasma. By employing in situ X-ray diffraction during annealing, the activation energy for Cu diffusion through the TaCN barrier was evaluated at 1.6eV. [Copyright &y& Elsevier]

Abstract: Carbon free TaN x films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaN x films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N2 plasma. The thermal stability of the TaN x films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaN x films deposited using N2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma. [Copyright &y& Elsevier]

Abstract: In this work, the thermal annealing effect on the metal gate effective work function (EWF) modulation for the Al/TiN/SiO2/p-Si(100) structure was investigated. Compared with the sample of TiN/SiO2/p-Si(100) structure, for the sample additionally capped with Al the flat band voltage has a very obvious shift as large as 0.54V to the negative direction after forming gas annealing. It is also revealed that the thermal budget can effectively influence both the EWF of the gate electrode and the thickness of the gate dielectric layer when a post annealing at 600°C with different soak times was applied to the samples with Al cap. Material characterization indicates that the diffusion of Al and the formation of Al oxide during annealing should be responsible for all the phenomena. The interface trap density Dit calculated from the high-frequency C–V and the laser-assisted high-frequency C–V curves show that the introduction of Al does not cause reliability problem in the Al/TiN/SiO2/p-Si structure. [Copyright &y& Elsevier]