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Abstract: The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different driving conditions is presented. Several devices of different generations, current and voltage ratings have been considered. The experimental characterisation has been performed by means of a non-destructive experimental set-up where IGBT modules are switched in presence of a protection circuit that is able to prevent device failure at the occurrence of any possible instable behaviour. The experimental analysis confirms the very good robustness of high power IGBT modules which can withstand large current overstress well beyond the declared RBSOA limits even at temperatures larger than those one declared by manufacturers. A comparison between IGBT device generation is also presented. [Copyright &y& Elsevier]

Abstract: Intermittently failing IC’s are difficult to debug with techniques such as time resolved photoemission (TRE), that measure internal signals, because the measurements will contain a mixture of passing and failing behaviour. In this paper, we show that by swapping 2 BNC cables on the outside of an Emiscope II TRE instrument, it becomes possible to measure separately both the passing and failing behaviour of an intermittently failing IC. We illustrate the techniques in two case studies. [Copyright &y& Elsevier]