1. Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies
- Author
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Jean-Guy Tartarin, C. Moreau, Benoit Lambert, Jean-Luc Roux, Oana Lazar, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, United Monolithic Semiconductors (UMS), DGA Maîtrise de l'information (DGA.MI), Direction générale de l'Armement (DGA), Centre National d'Études Spatiales [Toulouse] (CNES), DGA (2013 60 0039)CNES (2204), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
- Subjects
Mean time between failures ,Materials science ,business.industry ,Transistor ,Electrical engineering ,Context (language use) ,Gallium nitride ,Condensed Matter Physics ,Engineering physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Power (physics) ,law.invention ,chemistry.chemical_compound ,Reliability (semiconductor) ,chemistry ,law ,Junction temperature ,Transient (oscillation) ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical and Electronic Engineering ,Safety, Risk, Reliability and Quality ,business - Abstract
International audience; This work focuses on short term and long term time evolution of charges in the context of early identification of failure mechanisms in AlGaN/GaN High Electron Mobility Transistors (HEMTs). High power and high frequency devices are needed for new microwave applications, and large band-gap HEMTs offer a powerful alternative to traditional technologies (Si, GaAs, SiGe etc.); however, reliability issues still hamper the potential of these technologies to push their limits in terms of mean time to failure or junction temperature. This paper contributes to the investigation of transient behaviors of gate and drain currents over a large time scale for gallium nitride HEMTs; a correlation is found between the currents' evolution, in spite of the non-monotonic behavior, and a model is given through a mathematical relationship. Charges under the gated zone of the transistor are found to evolve with time, and turn into command variations of the electron density in the 2DEG. This work addresses the consequences of charge dependent mechanisms on the drain current's drop, and thus of the output power.
- Published
- 2015
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