17 results on '"Yu, Chong"'
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2. Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory
3. Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors
4. Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs
5. New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors
6. Increased hot carrier effects in Gate-All-Around SOI nMOSFET’s
7. The impacts of SILC and hot carrier induced drain leakage current on the refresh time in DRAM
8. Temperature dependence of hot carrier induced MOSFET degradation at low gate bias
9. Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs
10. A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors
11. Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs
12. Effects of device layout on the drain breakdown voltages in MuGFETs
13. NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer
14. Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs
15. Hot carrier induced device degradation in RF-nMOSFET's
16. New experimental findings on hot carrier effects in deep submicrometer surface channel PMOS
17. Diagnostic technique for projecting gate oxide reliability and device reliability
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