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In this paper, a novel approach is proposed for modeling the temperature-dependent behavior of a surface acoustic wave (SAW) resonator, by using a combination of a lumped-element equivalent circuit model and artificial neural networks (ANNs). More specifically, the temperature dependence of the equivalent circuit parameters/elements (ECPs) is modeled using ANNs, making the equivalent circuit model temperature-dependent. The developed model is validated by using scattering parameter measurements performed on a SAW device with a nominal resonant frequency of 423.22 MHz and under different temperature conditions (i.e., from 0 °C to 100 °C). The extracted ANN-based model can be used for simulation of the SAW resonator RF characteristics in the considered temperature range without the need for further measurements or equivalent circuit extraction procedures. The accuracy of the developed ANN-based model is comparable to that of the original equivalent circuit model. [ABSTRACT FROM AUTHOR]

The development of solid state gas sensors based on microtransducers and nanostructured sensing materials is the key point in the design of new portable measurement systems with sensing and identification performances comparable with those of most sophisticated analytical techniques. 1 Xu X., Gao L., Duan G. The Fabrication of Au@C Core/Shell Nanoparticles by Laser Ablation in Solutions and Their Enhancements to a Gas Sensor. 2 Li W., Lin J., Wang X., Jiang J., Guo S., Zheng G. Electrospray Deposition of ZnO Thin Films and Its Application to Gas Sensors. [Extracted from the article]

In this study, UV irradiation was used to improve the response of indium oxide (In 2 O 3 ) used as a CO sensing material for a resistive sensor operating in a low temperature range, from 25 °C to 150 °C. Different experimental conditions have been compared, varying UV irradiation mode and sensor operating temperature. Results demonstrated that operating the sensor under continuous UV radiation did not improve the response to target gas. The most advantageous condition was obtained when the UV LED irradiated the sensor in regeneration and was turned off during CO detection. In this operating mode, the semiconductor layer showed an apparent "p-type" behavior due to the UV irradiation. Overall, the effect was an improvement of the indium oxide response at 100 °C toward low CO concentrations (from 1 to 10 ppm) that showed higher results than in the dark, which is promising to extend the detection of CO with an In 2 O 3 -based sensor in the sub-ppm range.