1. 1.9-GHz low noise amplifier using high-linearity and low-noise composite-channel HEMTs.
- Author
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Cheng, Zhiqun, Cai, Yong, Liu, Jie, Zhou, Yugang, Lau, Kei May, and Chen, Kevin J.
- Subjects
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ELECTRONIC amplifiers , *NOISE , *MODULATION-doped field-effect transistors , *FIELD-effect transistors , *MICROWAVE optics - Abstract
Monolithic integrated 1.9-GHz low noise amplifier (LNA) using 1 μm-gate high-linearity and low noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT (CC-HEMT) device is designed, fabricated and characterized. The LNA exhibits a noise figure of 1.3 dB, an associated gain of 17 dB, an input return loss of -5.5 dB and an output return loss of -15 dB at 1.9 GHz. The IIP3 and IIP5 of the LNA are 15 and 12 dBm at 1.9 GHz. The LNA with 1 × 100 μm2 device shows high-dynamic range with decent gain and noise figure. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 1360–1362, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22459 [ABSTRACT FROM AUTHOR]
- Published
- 2007
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