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The asymmetrical nested metamaterial, composed of two split-ring resonators (SRRs) and two embedded gallium arsenide (GaAs) islands placed in the two SRRs, has been elaborately designed on quartz substrate. Its tunable and switchable resonances at terahertz (THz) frequencies are numerically demonstrated here based on different conductivities of GaAs, which can be transformed from semiconductor to metallic state through appropriate optical excitation. Without photoexcitation, our designed metamaterial has three resonance peaks in the range of monitored frequency range, and they are located at 0.813, 1.269 and 1.722 THz, respectively. As the conductivity of the two GaAs islands increases, different new resonances appear and constantly strengthen. Finally, four new resonant points are generated, at 0.432, 0.948, 1.578 and 1.875 THz, respectively. At the same time, the metamaterial structure is changed from the original nested mode to a new integral mode. Applying reversible changing conductivity of semiconductor to push the conversion of resonance, this asymmetrical nested design provides a new instance in application and development of additional THz devices. [ABSTRACT FROM AUTHOR]

We propose the design of a broadband planar metamaterial absorber (MA) at terahertz frequencies. The unit cell of the MA is composed of four dual-band sub-cells with different dimensions in a coplanar. The four dual-band sub-cell structures resonate at several neighboring frequencies. The absorber consists of two metallic layers separated by a dielectric spacer. Simulation results show that the metamaterial absorption at normal incidence is above 90% in the frequency of 6.56-8.10 THz. This design provides an effective way to construct broadband absorber. The multiple-reflection theory was used to explain the absorption mechanism of our investigated structures. The coupling of adjacent four dual-band sub-cells can introduce additional capacitance to affect the performance of absorber. [ABSTRACT FROM AUTHOR]

The characteristics of terahertz (THz) generation based on cascaded difference frequency generation (DFG) process in periodically inverted gallium arsenide () and gallium phosphide () is calculated from coupled wave equations, in which the output enhancement factors are 5.4 and 3.9 in the two crystals, respectively, compared with DFG without cascading. The optimal interaction length, influence of crystal absorption, wave vector mismatch and pump intensity are analyzed. A short discussion on wavelength tuning is also given. The calculated optimal operating parameters and conclusions can provide good directions for the experimental design. [ABSTRACT FROM AUTHOR]