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Layered metal composites have been widely used in various industries fields because of their excellent properties and are responsible for mechanical behavior of materials. This paper focuses on analyzing the deformation mechanism of the (110) interface under different loading states by MD. The results show that there are two yield points in the stress–strain curve under both Z- and Y-axis loading states. The first yield is the nucleation of dislocations at the interface, meantime the slip of dislocations and the extension of stacking faults begin at the Al layer. The second one, the dislocation passes through the interface, nucleates and emits toward the Cu layer at the interface, leading to a stress mutation. It is worth noting that during the stable rheological stage, the deformation mechanisms vary under different loading directions. Under Y-axis tensile loading, the phase transformation of FCC–HCP is present due to the interaction of dislocation movement and stacking fault. On the contrary, there are two twin paths A and B, improving the strength, during Z-axis compression loading. For other loading modes, there are three zones, namely the elastic stage, the release of energy, and strain hardening and dynamic softening. The interface plays the role of nucleation, annihilation and penetration of dislocations, and this interface-dislocation mechanism is reflected in the whole stage of plastic deformation. The results have an insight into the design and control in heterointerface. [ABSTRACT FROM AUTHOR]

This study investigates the impact of initial temperature on the microstructure and mechanical properties of welded components, using molecular dynamics (MD). The stress–strain curves of the welded components, following various initial temperature treatments, revealed a double yielding phenomenon. Notably, there was a significant strain difference of 19.7% between the two yields. When the strain was loaded to the point of doubling yielding, stacking faults and twins covered the aluminum component part, while no such observations were made in the nickel component part. Additionally, tensile cracking occurred in the aluminum component part. The results indicate that treatment at varying initial temperatures alters the internal structure of the welded components. After the material yielded the first time, a significant number of disordered atoms and Shockley partial dislocations emerge, resulting in a substantial buildup of dislocation tangles and reduced dislocation migration rates. Consequently, the material exhibits a phenomenon of double yielding, with dislocation slip and deformation serving as the primary mechanisms. The optimal mechanical properties of the welded components achieved an initial temperature of 200 K. Additionally, the effect of tensile temperature on the mechanical properties of the welded components were analyzed, and similar observations of double yielding were made. The significant number of dislocation tangles served as a barrier to dislocation slip, effectively enhancing the material's mechanical properties. The simulation results provide theoretical support for the development of aluminum–nickel multilayer film self-propagation welding process. [ABSTRACT FROM AUTHOR]

Using first principles calculations, we have confirmed the electronic and optical properties of 2D kagomes graphene doped with IVA elements (Si, Ge, Sn, Pb). The results show that Si-doped system has higher structural stability. The doping system increases the band gap of single-layer kagomes graphene, with Sn doping system being the most pronounced, and therefore can be considered as an attractive material for optoelectronic devices. The difference charge density and bonding population verify that the covalence of doping atoms and C atoms decreases, and that the degree of covalence diminution increases with increasing atomic number. The undoped kagomes graphene exhibits a strong light absorption capacity in the ultraviolet region, and the absorption peaks value decreases after doping, indicating that the element doping has a great weakening effect on the light absorption capacity, which has a certain potential significance for this material to be used as the antireflection film and wave permeable material of solar cells. In addition, the Pb and Sn-doped models possess the highest and lowest static dielectric constants, respectively. The peak value of electron energy loss is lower in the range of ultraviolet and visible wavelengths. These characteristics demonstrate that kagomes graphene offers substantial potential in the areas of optoelectronic and microelectronic devices. [ABSTRACT FROM AUTHOR]

In this paper, the effects of rare earth elements on the bonding strength and stability of TiC/fcc-Fe interface are explored by using the first-principles method based on density functional theory. The results show that the Ti terminal is more stable than the C terminal in the process of forming the interface. The alloying elements tend to segregate at position 2 on the side of fcc-Fe. The segregation of Mo, Nb, Cr and Ce alloying elements increases the interatomic electron cloud enrichment and consumption between the interfaces and enhances the Fe–Ti interactions. The d orbitals of Mo, Nb, Cr and Ce and f orbitals of Ce have strong hybridization with Fe-d orbitals and Ti-d orbitals electrons near the Fermi energy level, indicating an increase in bonding strength and stability of the interfaces. When Fe atoms are replaced by W, Ni and Al atoms, the covalent bond strength between interfacial atoms is reduced, thus weakening the interfacial bonding strength. This provides solid theoretical foundation with regard to further application in austenitic heat-resistant steel fields. [ABSTRACT FROM AUTHOR]

The intrinsic point defect influence data for β –Si3N4 by far are incomplete and experimental clarification is not easy. In this contribution, the effects of vacancy ( V 2c , V 6h and V Si ) and interstitial ( I N and I Si ) defects on the electronic properties of H-passivated β –Si3N4 (0001) surface are explored based on density functional theory (DFT) calculation. The results show that it is easier to form N 6h vacancy defects in the surface layer under Si-rich conditions. The existence of N vacancies makes the bottom of conduction bands shift downwards, and the top of valance band is away from Fermi level. The presence of V Si makes the system have the characteristics of p-type semiconductor, and the closer to the inner layer, the narrower the range of additional energy bands and the greater the degree of localization of electrons. The closer the Si atom vacancy is to the surface, the smaller the photon energy corresponding to the maximum absorption coefficient is. Compared with the N vacancy system, the Si vacancy system has higher reflection ability in the low energy region. For the interstitial defect systems, I N is easy to form on the surface layer, and I Si is easy to produce in the inner layer. The I N system has a new additional energy level at the Fermi level, and as the I N is closer to the inner layer, the energy range of the additional energy level is also narrower. In the I Si system, the new additional energy levels appear at the Fermi level and the intermediate band. The results have positive significance for the design of this advanced structural and functional integrated ceramics. The absorption coefficient and reflection coefficient of I Si - 3 system are much higher than those of other systems when the energy is greater than 2.5 eV. [ABSTRACT FROM AUTHOR]

In this paper, the microscopic electronic structure and related optical properties of the 4H-SiC (111) surface doped with B, Al, Ga elements are explored by first principles calculation methods. Compared with Al- and Ga-doped systems, the formation energy of B-doped system is found to be very small, showing excellent stability. The bandgaps of doped system decrease obviously, and an indirect bandgap is observed in all the systems. Charge density difference maps show that the covalency is increased after B doping and the iconicity is increased after Al and Ga doping. Moreover, due to the sharp increase in static dielectric constant and dielectric loss, the B-doped system can be used as the candidate for absorbing materials. In addition, the increase in the peak value of the absorption and reflectivity makes the doped systems more promising in the development of solar cells. [ABSTRACT FROM AUTHOR]