36 results on '"Holtz P"'
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2. Twin-domain Epitaxial Growth and Metal-insulator Transition of VO2 Thin Film on C-Plane Sapphire
3. Exploiting the Metal-Insulator Transition of VO2 Thin Films for Terahertz Wave Modulation and Switching
4. Mechanism of Metalorganic MBE Growth of High Quality AIN on Si (111)
5. Optical Properties of AlN/AlGa(In)N Short Period Superlattices–Deep UV Light Emitting Diodes
6. Interface Properties of Al/Ni Multilayers as Deposited and Following Volume Combustion Synthesis
7. Polarization-dependent spectroscopy of the near-bandgap excitonic emission in free standing GaN
8. Micro-Raman Scattering From Hexagonal GaN, AlN, and AlxGa1−x}N Grown on (111) Oriented Silicon: Stress Mapping of Cracks
9. Thermal Stability of SiGe/Si Quantum Well Structures Grown By APCVD
10. Evidence of Potential Fluctuations in Modulation Doped GaN/AlGaN Heterostructures
11. Optical Properties of Ingan/GaN Multi Quantum Well Structures
12. Facile Synthesis and Effect of Eu, Tb Co-doping On the Tunable Luminescent Properties of YBO3
13. Effects of MBE growth on the optical properties of AlGaN quantum wells
14. AlN periodic multiple-layer structures grown by MOVPE for high quality buffer layer
15. Direct Study of Thermal Conductivity of Aluminum Nanowires
16. Short period p-type AlN/AlGaN superlattices for deep UV light emitters.
17. Selective Area Epitaxy of InGaN/GaN Stripes, Hexagonal Rings, and Triangular Rings for Achieving Green Emission
18. Nanoparticle Layers Transformed from Ordered TiO2 Nanotube Arrays and Dye-Sensitized Solar Cells
19. The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma
20. Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN
21. Phonon Decay in GaN and AlN and Self-Heating in III-N Devices
22. Selective Area Growth of GaN Nano Islands by Metal Organic Chemical Vapor Deposition: Experiments and Computer Simulations
23. InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates.
24. Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy
25. Efficient Near Infrared Si/Ge Quantum Dot Photo-Detector Based on a Heterojunction Bipolar Transistor
26. Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices
27. Electronic Properties of n-type AlXGa1-XAs Alloys
28. Stress Distribution and Tomographic Profiling with Energy Dispersive X-Ray Scattering
29. Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire
30. Optical Emission Related to Holes Confined in p-Type δ-Doped Layers in GaAs
31. High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
32. Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures
33. Electronic Properties of n-type AlXGa1-XAs Alloys.
34. Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures.
35. Optical Spectroscopy of Defects in GaAs/AlGaAs Multiple Quantum Wells.
36. Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures.
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