20 results on '"Keller, S"'
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2. Optical Characteristics of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated by Excitation Energy Dependent Pl and Ple Spectroscopy
3. Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants
4. Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k
5. MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode
6. Pulsed Operation of Cleaved-Facet InGaN Laser Diodes
7. Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\left( {10\overline 1 \overline 1 } \right)$$\end{document} GaN templates
8. Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure
9. Development and Analysis of Scenarios for a Permanent Repository for Radioactive Wastes in Salt Rock
10. Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe
11. Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization
12. Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures
13. Electrical transport of an AlGaN/GaN two-dimensional electron gas
14. Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides
15. Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures
16. Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
17. Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells
18. Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
19. Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
20. Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\left({10\overline 1 \overline 1 } \right)$$\end{document} GaN templates
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