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By virtue of their unique electronic properties, nanometer-diameter sized single-walled carbon nanotubes represent ideal candidates to function as active parts of nanoelectronic memory storage devices. We show for the first time that GeTe, a phase change material, currently considered to be one of the most promising materials for data-storage applications, can efficiently be encapsulated within single-walled carbon nanontubes of 1.4 nm diameter. Structural investigations on the encapsulated GeTe nanowires have been carried out by high resolution transmission electron microscopy. The electronic interactions between the filling material and the host nanotube have been examined using ultraviolet photoelectron spectroscopy experiments and show that the electronic structure of the encapsulating nanotube and that of the encased filling are not perturbed by the presence of each of the other component.The newly formed hybrids offer potential to operate as active elements in non-volatile electronic memory storage devices.

Single walled carbon nanotubes have been filled with a variety of metal oxides and the structural and morphological characteristics of the metal_oxide@SWNT composites studied. Advanced techniques of software aberrations correction for transmission electron microscopy were used for characterisation. This research shows that, despite their higher reactivity compared to salts such as halides, oxides can be encapsulated within SWNTs with some compounds attaining remarkable filling yields.

In the present paper regular systems of silicon and platinum assemblies have been fabricated in a three-dimensional (3D) void sublattice of synthetic opal. The detailed TEM and HREM structure study of ‘opal-Si’ and ‘opal-Pt-Si’ composites was carried out. It was found that in regular composites ‘opal-Si’ the silica spheres were covered uniformly with a nanocrystalline silicon layer of up to 25-30 nm in thickness. To form the Pt-Si contact the silica spheres were coated with platinum layer before embedding silicon. The results obtained demonstrate a possibility of creating 3D multilayer semiconductor structure (p-n junctions, Schottky barriers etc.) on the inner surface of opal voids.

The crystal growth behaviour and crystallography of a variety of metal halides incorporated within single walled carbon nanotubes (SWNTs) as determined by high resolution electron microscopy (HRTEM) is described. Simple packed structures, such as the alkali halides, form related structures within SWNTs that are found to be integral atomic layers in terms of their thickness as a function of the encapsulating SWNT diameter. An enhanced HRTEM image restoration technique reveals precise data concerning lattice distortions present in these crystals. More complex structures, such as those derived from 3D complex, layered and chain halides form related crystal structures within SWNTs. In narrow SWNTs (i.e. with diameters less than ca. 1.6 nm), structures consisting of individual 1D polyhedral chains (1D-PHCs) were obtained that were derived from the corresponding bulk halides structures. In the case of infinite 3D network and layered halides, the 1D polyhedral chains form with lower co-ordinations than in the bulk. Molecular halides also intercalate into SWNTs but these do not readily form organised structures within SWNTs.