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Start Over Author "M.P.P. de Castro" Journal mrs proceedings
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1. Lateral InxGa1−x, P Heterostructures Obtained by Single Step Growth on Pre-Patterned Substrate by Chemical Beam Epitaxy

Author

C.A. Ribeiro, M.P.P. de Castro, Newton C. Frateschi, M.M. Carvalho, and J. Betitni

Subjects
Materials science, Band gap, business.industry, Heterojunction, Single step, Laser, Chemical beam epitaxy, law.invention, Discontinuity (geotechnical engineering), law, Optoelectronics, Compositional variation, business, Patterned substrate
Abstract

We present an investigation on the spatial compositional variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. Neighboring regions with 190 meV bandgap discontinuity are observed with the growth at 500°C. The development of laser structures on V-grooves that incorporate these lateral heterostructures is achieved by controlling the growth temperature during growth

Published
1999

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