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The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition metal dopants are exchange coupled to develop a long-range ferromagnetic order, which is essential for realizing QAHE. However, the addition of random dopants does not only introduce excess charge carriers that require readjusting the Bi/Sb ratio, but also unavoidably introduces paramagnetic spins that can adversely affect the chiral edge transport in QAHE. In this work, we show a heterostructure approach to independently tune the electronic and magnetic properties of the topological surface states in (BixSb1-x)2Te3 without resorting to random doping of transition metal elements. In heterostructures consisting of a thin (BixSb1-x)2Te3 TI film and yttrium iron garnet (YIG), a high Curie temperature (∼550 K) magnetic insulator, we find that the TI surface in contact with YIG becomes ferromagnetic via proximity coupling which is revealed by the anomalous Hall effect (AHE). The Curie temperature of the magnetized TI surface ranges from 20 to 150 K but is uncorrelated with the Bi fraction x in (BixSb1-x)2Te3. In contrast, as x is varied, the AHE resistivity scales with the longitudinal resistivity. In this approach, we decouple the electronic properties from the induced ferromagnetism in TI. The independent optimization provides a pathway for realizing QAHE at higher temperatures, which is important for novel spintronic device applications.

Itis crucial for the studies of the transport properties and quantumeffects related to Dirac surface states of three-dimensional topologicalinsulators (3D TIs) to be able to simultaneously tune the chemicalpotentials of both top and bottom surfaces of a 3D TI thin film. Wehave realized this in molecular beam epitaxy-grown thin films of 3DTIs, as well as magnetic 3D TIs, by fabricating dual-gate structureson them. The films could be tuned between n-type and p-type by eachgate alone. Combined application of two gates can reduce the carrierdensity of a TI film to a much lower level than with only one of themand enhance the film resistance by 10 000%, implying that Fermilevel is tuned very close to the Dirac points of both top and bottomsurface states without crossing any bulk band. The result promisesapplications of 3D TIs in field effect devices. [ABSTRACT FROM AUTHOR]

Magnetic topological materials with coexisting magnetism and nontrivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi 2 Te 4 show fascinating even-odd layer-dependent physics. In this work, we fabricate a series of thin-flake MnBi 2 Te 4 devices using stencil masks and observe the Chern insulator state at high magnetic fields. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Through theoretical calculations, we attribute the even-odd layer-dependent exchange bias effect to the contrasting surface and bulk magnetic properties of MnBi 2 Te 4 devices. Our findings reveal the microscopic magnetic configuration of MnBi 2 Te 4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi 2 Te 4 devices.

Recently, MnBi 2 Te 4 has been demonstrated to be an intrinsic magnetic topological insulator and the quantum anomalous Hall (QAH) effect was observed in exfoliated MnBi 2 Te 4 flakes. Here, we used molecular beam epitaxy (MBE) to grow MnBi 2 Te 4 films with thickness down to 1 septuple layer (SL) and performed thickness-dependent transport measurements. We observed a nonsquare hysteresis loop in the antiferromagnetic state for films with thickness greater than 2 SL. The hysteresis loop can be separated into two AH components. We demonstrated that one AH component with the larger coercive field is from the dominant MnBi 2 Te 4 phase, whereas the other AH component with the smaller coercive field is from the minor Mn-doped Bi 2 Te 3 phase. The extracted AH component of the MnBi 2 Te 4 phase shows a clear even-odd layer-dependent behavior. Our studies reveal insights on how to optimize the MBE growth conditions to improve the quality of MnBi 2 Te 4 films.