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Your search keyword '"Hesjedal, Thorsten"' showing total 14 results
Start Over Author "Hesjedal, Thorsten" Journal nano letters
14 results on '"Hesjedal, Thorsten"'

1. Evolution of Emergent Monopoles into Magnetic Skyrmion Strings

Author

Jin, Haonan, primary, Tan, Wancong, additional, Liu, Yizhou, additional, Ran, Kejing, additional, Fan, Raymond, additional, Shangguan, Yanyan, additional, Guang, Yao, additional, van der Laan, Gerrit, additional, Hesjedal, Thorsten, additional, Wen, Jinsheng, additional, Yu, Guoqiang, additional, and Zhang, Shilei, additional

Published
2023
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3. Transition Metal Synthetic Ferrimagnets: Tunable Media for All-Optical Switching Driven by Nanoscale Spin Current

Author

Da̧browski, Maciej, primary, Scott, Jade N., additional, Hendren, William R., additional, Forbes, Colin M., additional, Frisk, Andreas, additional, Burn, David M., additional, Newman, David G., additional, Sait, Connor R. J., additional, Keatley, Paul S., additional, N’Diaye, Alpha T., additional, Hesjedal, Thorsten, additional, van der Laan, Gerrit, additional, Bowman, Robert M., additional, and Hicken, Robert J., additional

Published
2021
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5. Tailoring the Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures

Author

Chen, Peng, primary, Zhang, Yong, additional, Yao, Qi, additional, Tian, Fugu, additional, Li, Lun, additional, Qi, Zhengkun, additional, Liu, Xiaoyang, additional, Liao, Liyang, additional, Song, Cheng, additional, Wang, Jingyuan, additional, Xia, Jing, additional, Li, Gang, additional, Burn, David M., additional, van der Laan, Gerrit, additional, Hesjedal, Thorsten, additional, Zhang, Shilei, additional, and Kou, Xufeng, additional

Published
2020
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9. Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2

Author

Feng, Jiagui, primary, Biswas, Deepnarayan, additional, Rajan, Akhil, additional, Watson, Matthew D., additional, Mazzola, Federico, additional, Clark, Oliver J., additional, Underwood, Kaycee, additional, Marković, Igor, additional, McLaren, Martin, additional, Hunter, Andrew, additional, Burn, David M., additional, Duffy, Liam B., additional, Barua, Sourabh, additional, Balakrishnan, Geetha, additional, Bertran, François, additional, Le Fèvre, Patrick, additional, Kim, Timur K., additional, van der Laan, Gerrit, additional, Hesjedal, Thorsten, additional, Wahl, Peter, additional, and King, Phil D. C., additional

Published
2018
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11. Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2.

Author

Feng, Jiagui, Biswas, Deepnarayan, Rajan, Akhil, Watson, Matthew D., Mazzola, Federico, Clark, Oliver J., Underwood, Kaycee, Marković, Igor, McLaren, Martin, Hunter, Andrew, Burn, David M., Duffy, Liam B., Barua, Sourabh, Balakrishnan, Geetha, Bertran, François, Le Fèvre, Patrick, Kim, Timur K., van der Laan, Gerrit, Hesjedal, Thorsten, and Wahl, Peter

Published
2018
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13. Exchange Bias in Magnetic Topological Insulator Superlattices

Author

Adrian M. Ionescu, Angadjit Singh, Thorsten Hesjedal, Yu Yang Fredrik Liu, Crispin H. W. Barnes, Balati Kuerbanjiang, Jieyi Liu, Hesjedal, Thorsten [0000-0001-7947-3692], and Apollo - University of Cambridge Repository

Subjects
Materials science, Letter, Condensed matter physics, Band gap, Mechanical Engineering, Superlattice, Quantum anomalous Hall effect, superlattice, Bioengineering, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Condensed Matter::Materials Science, topological insulators, Exchange bias, Hall effect, Topological insulator, exchange bias, proximity effect, Proximity effect (superconductivity), Curie temperature, General Materials Science, Condensed Matter::Strongly Correlated Electrons, 0210 nano-technology
Abstract

Magnetic doping and proximity coupling can open a band gap in a topological insulator (TI) and give rise to dissipationless quantum conduction phenomena. Here, by combining these two approaches, we demonstrate a novel TI superlattice structure that is alternately doped with transition and rare earth elements. An unexpected exchange bias effect is unambiguously confirmed in the superlattice with a large exchange bias field using magneto-transport and magneto-optical techniques. Further, the Curie temperature of the Cr-doped layers in the superlattice is found to increase by 60 K compared to a Cr-doped single-layer film. This result is supported by density-functional-theory calculations, which indicate the presence of antiferromagnetic ordering in Dy:Bi2Te3 induced by proximity coupling to Cr:Sb2Te3 at the interface. This work provides a new pathway to realizing the quantum anomalous Hall effect at elevated temperatures and axion insulator state at zero magnetic field by interface engineering in TI heterostructures.

Published
2020

14. Transition Metal Synthetic Ferrimagnets: Tunable Media for All-Optical Switching Driven by Nanoscale Spin Current.

Author

Da Browski M, Scott JN, Hendren WR, Forbes CM, Frisk A, Burn DM, Newman DG, Sait CRJ, Keatley PS, N'Diaye AT, Hesjedal T, van der Laan G, Bowman RM, and Hicken RJ

Abstract

All-optical switching of magnetization has great potential for use in future ultrafast and energy efficient nanoscale magnetic storage devices. So far, research has been almost exclusively focused on rare-earth based materials, which limits device tunability and scalability. Here, we show that a perpendicularly magnetized synthetic ferrimagnet composed of two distinct transition metal ferromagnetic layers, Ni 3 Pt and Co, can exhibit helicity independent magnetization switching. Switching occurs between two equivalent remanent states with antiparallel alignment of the Ni 3 Pt and Co magnetic moments and is observable over a broad temperature range. Time-resolved measurements indicate that the switching is driven by a spin-polarized current passing through the subnanometer Ir interlayer. The magnetic properties of this model system may be tuned continuously via subnanoscale changes in the constituent layer thicknesses as well as growth conditions, allowing the underlying mechanisms to be elucidated and paving the way to a new class of data storage devices.

Published
2021
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