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Transition metal dichalcogenides (TMDCs) and two-dimensional organic and inorganic hybrid lead halide perovskites (2DPVSKs) have emerged as highly promising materials for ultralight and ultrathin optoelectronics application. They both exhibit tunability of electronic properties such as band structure, and they can form heterostructures with various types of two-dimensional materials for novel physical properties not observed in single components. However, TMDCs exhibit poor emission efficiency due to defect states and direct-to-indirect interband transition, and 2DPVSKs suffer from poor stability in ambient atmosphere. Here we report that fabrication of TMDC-on-2DPVSK heterostructures using a solvent-free process leads to novel optical transitions unique to the heterostructure which arise from the hybrid interface and exhibit a strong photoluminescence. Moreover, a two orders of magnitude enhancement of the photoluminescence as compared to WS2 emission is observed. The TMDC on top of 2DPVSK also significantly improves the stability as compared to bare 2DPVSK. Enhanced emission can be explained by electronic structure modification of TMDC by novel interfacial interactions between TMDC and 2DPVSK materials, which shows promise of the heterostructure for high efficiency and stable optoelectronic devices.

Transition metal dichalcogenides (TMDCs) and two-dimensional organic and inorganic hybrid lead halide perovskites (2DPVSKs) have emerged as highly promising materials for ultralight and ultrathin optoelectronics application. They both exhibit tunability of electronic properties such as band structure, and they can form heterostructures with various types of two-dimensional materials for novel physical properties not observed in single components. However, TMDCs exhibit poor emission efficiency due to defect states and direct-to-indirect interband transition, and 2DPVSKs suffer from poor stability in ambient atmosphere. Here we report that fabrication of TMDC-on-2DPVSK heterostructures using a solvent-free process leads to novel optical transitions unique to the heterostructure which arise from the hybrid interface and exhibit a strong photoluminescence. Moreover, a two orders of magnitude enhancement of the photoluminescence as compared to WS

We present photoluminescence studies of individual semiconducting single-wall carbon nanotubes at room and cryogenic temperatures. From the analysis of spatial and spectral features of nanotube photoluminescence, we identify characteristic signatures of unintentional exciton localization. Moreover, we quantify the energy scale of exciton localization potentials as ranging from a few to a few tens of millielectronvolts and stemming from both environmental disorder and shallow covalent side-wall defects. Our results establish disorder-induced crossover from the diffusive to the localized regime of nanotube excitons at cryogenic temperatures as a ubiquitous phenomenon in micelle-encapsulated and as-grown carbon nanotubes.

We have studied intersubband decay of E22 excitons in semiconducting carbon nanotubes experimentally and theoretically. Photoluminescence excitation line widths of semiconducting nanotubes with chiral indicess (n, m) can be mapped onto a connectivity grid with curves of constant (n-m) and (2n+m). Moreover, the global behavior of E22 linewidths is best characterized by a strong increase with energy irrespective of their (n-m) mod(3)= \pm 1 family affiliation. Solution of the Bethe-Salpeter equations shows that the E22 linewidths are dominated by phonon assisted coupling to higher momentum states of the E11 and E12 exciton bands. The calculations also suggest that the branching ratio for decay into exciton bands vs free carrier bands, respectively is about 10:1., Comment: 4 pages, 4 figures