Search

The development of a facile method for fabricating one-dimensional, precisely positioned nanostructures over large areas offers exciting opportunities in fundamental research and innovative applications. Large-scale nanofabrication methods have been restricted in accessibility due to their complexity and cost. Likewise, bottom-up synthesis of nanowires has been limited in methods to assemble these structures at precisely defined locations. Nanomaterials such as PbZr(x)Ti(1-x)O(3) (PZT) nanowires (NWs)--which may be useful for nonvolatile memory storage (FeRAM), nanoactuation, and nanoscale power generation--are difficult to synthesize without suffering from polycrystallinity or poor stoichiometric control. Here, we report a novel fabrication method which requires only low-resolution photolithography and electrochemical etching to generate ultrasmooth NWs over wafer scales. These nanostructures are subsequently used as patterning templates to generate PZT nanowires with the highest reported piezoelectric performance (d(eff) ∼ 145 pm/V). The combined large-scale nanopatterning with hierarchical assembly of functional nanomaterials could yield breakthroughs in areas ranging from nanodevice arrays to nanodevice powering.

We demonstrate that ferroelectric (FE) polarizations oriented along the finite thickness direction in ultrathin films are enhanced by the introduction of extreme curvature, thereby suppressing the finite-size-driven evolution of the FE phase transition temperature T(C). The measured responses within individual nanoshells possess magnitudes nearly three times that for their planar counterparts while exhibiting finite curvature-dependent offsets in FE switching hystereses. In stark contrast to the expected scaling of a depression of T(C) with inverse thickness, results based on modified Landau-Ginzburg model calculations indicate geometric curvature-driven polarization gradients in ultrathin films result in significant increases in T(C).

The interaction between light and reduced-dimensionality silicon attracts significant interest due to the possibilities of designing nanoscaled optical devices, highly cost-efficient solar cells, and ultracompact optoelectronic systems that are integrated with standard microelectronic technology. We demonstrate that Si nanowires (SiNWs) possessing metal-nanocluster coatings support a multiplicatively enhanced near-field light-matter interaction. Raman scattering from chemisorbed probing molecules provides a quantitative measure of the strength of this enhanced coupling. An enhancement factor of 2 orders of magnitude larger than that for the surface plasmon resonance alone (without the SiNWs) along with the attractive properties of SiNWs, including synthetic controllability of shape, indicates that these nanostructures may be an attractive and versatile material platform for the design of nanoscaled optical and optoelectronic circuits.