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1. Manipulating Dirac States in BaNiS2 by Surface Charge Doping

Author

Zhang, Jiuxiang, primary, Sohier, Thibault Daniel Pierre, additional, Casula, Michele, additional, Chen, Zhesheng, additional, Caillaux, Jonathan, additional, Papalazarou, Evangelos, additional, Perfetti, Luca, additional, Petaccia, Luca, additional, Bendounan, Azzedine, additional, Taleb-Ibrahimi, Amina, additional, Santos-Cottin, David, additional, Klein, Yannick, additional, Gauzzi, Andrea, additional, and Marsi, Marino, additional

Published
2023
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2. Manipulating Dirac States in BaNiS2 by Surface Charge Doping.

Author

Zhang, Jiuxiang, Sohier, Thibault Daniel Pierre, Casula, Michele, Chen, Zhesheng, Caillaux, Jonathan, Papalazarou, Evangelos, Perfetti, Luca, Petaccia, Luca, Bendounan, Azzedine, Taleb-Ibrahimi, Amina, Santos-Cottin, David, Klein, Yannick, Gauzzi, Andrea, and Marsi, Marino

Published
2023
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3. Electron Dynamics in Hybrid Perovskites Reveal the Role of Organic Cations on the Screening of Local Charges

Author

Cherasse, Marie, primary, Dong, Jingwei, additional, Trippé-Allard, Gaëlle, additional, Deleporte, Emmanuelle, additional, Garrot, Damien, additional, Maehrlein, Sebastian F., additional, Wolf, Martin, additional, Chen, Zhesheng, additional, Papalazarou, Evangelos, additional, Marsi, Marino, additional, Rueff, Jean-Pascal, additional, Taleb-Ibrahimi, Amina, additional, and Perfetti, Luca, additional

Published
2022
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6. Manipulating the Topological Interface by Molecular Adsorbates: Adsorption of Co-Phthalocyanine on Bi2Se3

Author

Caputo, Marco, primary, Panighel, Mirko, additional, Lisi, Simone, additional, Khalil, Lama, additional, Santo, Giovanni Di, additional, Papalazarou, Evangelos, additional, Hruban, Andrzej, additional, Konczykowski, Marcin, additional, Krusin-Elbaum, Lia, additional, Aliev, Ziya S., additional, Babanly, Mahammad B., additional, Otrokov, Mikhail M., additional, Politano, Antonio, additional, Chulkov, Evgueni V., additional, Arnau, Andrés, additional, Marinova, Vera, additional, Das, Pranab K., additional, Fujii, Jun, additional, Vobornik, Ivana, additional, Perfetti, Luca, additional, Mugarza, Aitor, additional, Goldoni, Andrea, additional, and Marsi, Marino, additional

Published
2016
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7. Manipulating the Topological Interface by Molecular Adsorbates: Adsorption of Co-Phthalocyanine on Bi2Se3.

Author

Caputo, Marco, Panighel, Mirko, Lisi, Simone, Khalil, Lama, Di Santo, Giovanni, Papalazarou, Evangelos, Hruban, Andrzej, Konczykowski, Marcin, Krusin-Elbaum, Lia, Aliev, Ziya S., Babanly, Mahammad B., Otrokov, Mikhail M., Politano, Antonio, Chulkov, Evgueni V., Arnau, Andrés, Marinova, Vera, Das, Pranab K., Jun Fujii, Vobornik, Ivana, and Perfetti, Luca

Published
2016
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8. Manipulating Dirac States in BaNiS2by Surface Charge Doping

Author

Zhang, Jiuxiang, Sohier, Thibault Daniel Pierre, Casula, Michele, Chen, Zhesheng, Caillaux, Jonathan, Papalazarou, Evangelos, Perfetti, Luca, Petaccia, Luca, Bendounan, Azzedine, Taleb-Ibrahimi, Amina, Santos-Cottin, David, Klein, Yannick, Gauzzi, Andrea, and Marsi, Marino

Abstract

In the Dirac semimetal BaNiS2, the Dirac nodes are located along the Γ–M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ–M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS2single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

Published
2023
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9. Manipulating the Topological Interface by Molecular Adsorbates: Adsorption of Co-Phthalocyanine on Bi2Se3.

Author

Caputo, Marco, Panighel, Mirko, Lisi, Simone, Khalil, Lama, Di Santo, Giovanni, Papalazarou, Evangelos, Hruban, Andrzej, Konczykowski, Marcin, Krusin-Elbaum, Lia, Aliev, Ziya S., Babanly, Mahammad B., Otrokov, Mikhail M., Politano, Antonio, Chulkov, Evgueni V., Arnau, Andrés, Marinova, Vera, Das, Pranab K., Jun Fujii, Vobornik, Ivana, and Perfetti, Luca

Subjects
*BISMUTH selenide, *PHTHALOCYANINES, *TOPOLOGICAL insulators, *INTERFACES (Physical sciences), *ADSORBATES, *SPINTRONICS
Abstract

Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal-organic molecules with the topological insulator spin-momentum locked surface states, which can be perturbed enhancing or suppressing spintronics-relevant properties such as spin coherence. Here we show results from an angle-resolved photemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM) study of the prototypical cobalt phthalocyanine (CoPc)/Bi2Se3 interface. We demonstrate that that the hybrid interface can act on the topological protection of the surface and bury the Dirac cone below the first quintuple layer. [ABSTRACT FROM AUTHOR]

Published
2016
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10. Manipulating Dirac States in BaNiS 2 by Surface Charge Doping.

Author

Zhang J, Sohier TDP, Casula M, Chen Z, Caillaux J, Papalazarou E, Perfetti L, Petaccia L, Bendounan A, Taleb-Ibrahimi A, Santos-Cottin D, Klein Y, Gauzzi A, and Marsi M

Abstract

In the Dirac semimetal BaNiS 2 , the Dirac nodes are located along the Γ-M symmetry line of the Brillouin zone, instead of being pinned at fixed high-symmetry points. We take advantage of this peculiar feature to demonstrate the possibility of moving the Dirac bands along the Γ-M symmetry line in reciprocal space by varying the concentration of K atoms adsorbed onto the surface of cleaved BaNiS 2 single crystals. By means of first-principles calculations, we give a full account of this observation by considering the effect of the electrons donated by the K atom on the charge transfer gap, which establishes a promising tool for engineering Dirac states at surfaces, interfaces, and heterostructures.

Published
2023
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