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We explore the implementation of specific optical properties of armchair graphene nanoribbons (AGNRs) through edge-defect manipulation. This technique employs the tight-binding model in conjunction with the calculated absorption spectral function. Modification of the edge states gives rise to the diverse electronic structures with striking changes in the band gap and special flat bands at low energy. The optical-absorption spectra exhibit unique excitation peaks, and they strongly depend on the type and period of the edge extension. Remarkably, there exist the unusual transition channels associated with the flat bands for selected edge-modified systems. We discovered the special rule governing how the edge-defect influences the electronic and optical properties in AGNRs. Our theoretical prediction demonstrates an efficient way to manipulate the optical properties of AGNRs. This might be of importance in the search for suitable materials designed to have possible technology applications in nano-optical, plasmonic and optoelectronic devices.

In this paper, by introducing a generalized quantum-kinetic model which is coupled self-consistently with Maxwell and Boltzmann transport equations, we elucidate the significance of using input from first-principles band-structure computations for an accurate description of ultra-fast dephasing and scattering dynamics of electrons in graphene. In particular, we start with the tight-binding model (TBM) for calculating band structures of solid covalent crystals based on localized Wannier orbital functions, where the employed hopping integrals in TBM have been parameterized for various covalent bonds. After that, the general TBM formalism has been applied to graphene to obtain both band structures and wave functions of electrons beyond the regime of effective low-energy theory. As a specific example, these calculated eigenvalues and eigen vectors have been further utilized to compute the Bloch-function form factors and intrinsic Coulomb diagonal-dephasing rates for induced optical coherence of electron-hole pairs in spectral and polarization functions, as well as the energy-relaxation time from extrinsic impurity scattering of electrons for non-equilibrium occupation in band transport.