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The Au ion implantation process has emerged as an effective and simple method to be utilized for the fabrication of opto-electronic materials and devices due to numerous fascinating features of Au nanoparticles such as surface plasmon resonance (SPR), large third-order nonlinearity and a fast response time. In this paper, we describe the fabrication of a novel Au nanoparticle saturable absorber (Au NP-SA) by embedding the Au NPs into a SiO2 thin film using the ion implantation process, which shows excellent saturable absorption features due to the localized surface plasmon resonance (LSPR) effect of Au NPs. A stable and high-quality pulsed laser with a repetition rate of 33.3 kHz and a single pulse energy of 11.7 nJ was successfully constructed with the Au NP-SA. Both the stable operation characteristic of the obtained Q-switched pulsed laser and the high repeatability of the fabrication process of the Au NP-SA were demonstrated. In addition, the simple feasibility and maturity of the ion implantation process allow for the plasmonic nanoparticles to be easily integrated into other types of opto-electronic materials and devices to further improve their performance, and shows immense potential for the production of wafer-level products. [ABSTRACT FROM AUTHOR]

Metasurfaces have shown their great capability to manipulate electromagnetic waves. As a new concept, reconfigurable metasurfaces attract researchers' attention. There are many kinds of reconfigurable components, devices and materials that can be loaded on metasurfaces. When cooperating with reconfigurable structures, dynamic control of the responses of metasurfaces are realized under external excitations, offering new opportunities to manipulate electromagnetic waves dynamically. This review introduces some common methods to design reconfigurable metasurfaces classified by the techniques they use, such as special materials, semiconductor components and mechanical devices. Specifically, this review provides a comparison among all the methods mentioned and discusses their pros and cons. Finally, based on the unsolved problems in the designs and applications, the challenges and possible developments in the future are discussed. [ABSTRACT FROM AUTHOR]

Owing to its broadband absorption, ultrafast recovery time, and excellent saturable absorption feature, graphene has been recognized as one of the best candidates as a high-performance saturable absorber (SA). However, the low absorption efficiency and reduced modulation depth severely limit the application of graphene-based SA in ultrafast fiber lasers. In this paper, a single-layer graphene saturable absorber mirror (SG-SAM) was coated by a quarter-wave SiO2 passivated layer, and a significantly enhanced modulation depth and reduced saturation intensity were obtained simultaneously compared to the SG-SAM without the SiO2 coating layer. In addition, long-term operational stability was found in the device due to the excellent isolation and protection of the graphene absorption layer from the external environment by the SiO2 layer. The high performance of the SAM was further confirmed by the construction of a ring-cavity EDF laser generating mode-locked pulses with a central wavelength of 1563.7 nm, a repetition rate of 34.17 MHz, and a pulse width of 830 fs. [ABSTRACT FROM AUTHOR]

Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES1) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES1 and second excited-state (ES2) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources. [ABSTRACT FROM AUTHOR]

Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots. Yang et al., fabricated excellent semiconductor lasers in harmonic mode-locked fiber lasers by synthesizing titanium nitride (TiN) quantum dot (QD) materials. At the same time, three types of III-V QD-based lasers for optical communication are summarized: active electrically pumped lasers, passive lasers, and semiconductor saturable absorption mirror mode-locked lasers. [Extracted from the article]

Owing to their high integration and functionality, nanometer-scale optoelectronic devices based on III-V semiconductor materials are emerging as an enabling technology for fiber-optic communication applications. Semiconductor quantum dots (QDs) with the three-dimensional carrier confinement offer potential advantages to such optoelectronic devices in terms of high modulation bandwidth, low threshold current density, temperature insensitivity, reduced saturation fluence, and wavelength flexibility. In this paper, we review the development of the molecular beam epitaxial (MBE) growth methods, material properties, and device characteristics of semiconductor QDs. Two kinds of III-V QD-based lasers for optical communication are summarized: one is the active electrical pumped lasers, such as the Fabry–Perot lasers, the distributed feedback lasers, and the vertical cavity surface emitting lasers, and the other is the passive lasers and the instance of the semiconductor saturable absorber mirrors mode-locked lasers. By analyzing the pros and cons of the different QD lasers by their structures, mechanisms, and performance, the challenges that arise when using these devices for the applications of fiber-optic communication have been presented. [ABSTRACT FROM AUTHOR]